RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS

DESCRIPTION The SD1895-03 is a 28 V silicon NPN planar transistor designed for INMARSAT and other 1.6 GHz SATCOM applications. This device utilizes polysilicon site ballasting with a gold metallized die to achieve high reliability and ruggedness. ■ 1.65 GHz ■ 28 VOLTS ■ OVERLAY DIE GEOMETRY ■

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STMICROELECTRONICS

意法半導(dǎo)體

RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS

DESCRIPTION The SD1895-03 is a 28 V silicon NPN planar transistor designed for INMARSAT and other 1.6 GHz SATCOM applications. This device utilizes polysilicon site ballasting with a gold metallized die to achieve high reliability and ruggedness. ■ 1.65 GHz ■ 28 VOLTS ■ OVERLAY DIE GEOMETRY ■

文件：45.31 Kbytes 頁數(shù)：4 Pages

STMICROELECTRONICS

意法半導(dǎo)體

RF & MICROWAVE TRANSISTORS 1.65 GHz SATCOM APPLICATIONS

DESCRIPTION The SD1897 is a 28 V Class C silicon NPN transistor designed for INMARSAT and other 1.65 GHz SATCOM applications. A gold metallized emitter ballasted die geometry is employed providing high gain and efficiency while ensuring long term re liability and ruggedness under severe oper

文件：47.44 Kbytes 頁數(shù)：4 Pages

STMICROELECTRONICS

意法半導(dǎo)體

RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS

DESCRIPTION The SD1898 is a 28 V Class C silicon NPN transistor designed for INMARSAT and other 1.65 GHz SATCOM applications. A gold metallized emitterballasted die geometry is employed providing high gain and efficiency while ensuring long term reliability and ruggedness under severe operating c

文件：45.75 Kbytes 頁數(shù)：4 Pages

STMICROELECTRONICS

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NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI SD1899 is a Common Base Device Designed for class C Applications. FEATURES INCLUDE: ? Gold Metalization ? Input/Output Matching ? Diffused Ballast Resistors

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ASI

RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS

DESCRIPTION The SD1899 is a common base silicon NPN bipolar device optimized for 1.6 GHz SATCOM applications. SD1899 offers superior gain and collector efficiency, making it an ideal choice for Class C power amplifiers used in portable as well as fixed SATCOM terminals. ■ REFRACTORY/GOLD METALL

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STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/2k/marking.html">2K；Package：SOD-323；Unidirectional TVS Diodes

Description The SDxxC Series is designed for applications requiring transient over voltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. The

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GWSEMI

唯圣電子

絲?。?a target="_blank" title="Marking" href="/d18c/marking.html">D18C；Package：SOD-323；TVS ARRAY

350 Watts peak pulse power (tp = 8/20μs) Transient protection for data lines to IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) 40A (5/50ns) IEC 61000-4-5 (Lightning) 24A (8/20μs) Small package for use in portable electronics Suitable replacement for MLV’ s in ESD protect

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SMCDIODE

桑德斯微電子

絲?。?a target="_blank" title="Marking" href="/18lc/marking.html">18LC；Package：SOD-323；TVS ARRAY

Protects 3.3, 5, 8, 12, 15, 18, 24V Components 350 Watts Peak Pulse Power per Line (tp = 8/20μs) Unidirectional Configurations Replacement for MLV (0805) Protects One Power or I/O Port Low Clamping Voltage Terminals finish: 100 Pure Tin “-A” is an AEC-Q101 qualified device This is a Pb-fre

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SMCDIODE

桑德斯微電子

High Power Density, Low Profile, Shielded Inductors

[COOPER Bussmann] Description ? Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density ? Inductance range from .47uH to 1000uH ? Current range from 6.00 to 0.088 Amps ? Ferrite shielded, low EMI Applications ? Digital cameras,

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