NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI SD1727 is a Common Emitter Device Designed for High Linearity Class A/AB HF Applications. FEATURES INCLUDE: ? Gold Metalization ? Emitter Ballasting

文件：27.97 Kbytes 頁(yè)數(shù)：2 Pages

ASI

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

文件：288.66 Kbytes 頁(yè)數(shù)：5 Pages

ETCList of Unclassifed Manufacturers

未分類(lèi)制造商

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION The SD1727 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. ■ OPTIMIZED FOR SSB ■ 30 MHz ■ 50 VOLTS ■ IMD ?30 dB ■ COMMON EMITTER

文件：528.66 Kbytes 頁(yè)數(shù)：7 Pages

STMICROELECTRONICS

意法半導(dǎo)體

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

文件：288.66 Kbytes 頁(yè)數(shù)：5 Pages

ETCList of Unclassifed Manufacturers

未分類(lèi)制造商

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION The SD1728 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ■ OPTIMIZED FOR SSB ■ 30 MHz ■ 50 VOLTS ■ IMD ? 30 dB ■ GOLD METALLIZATION ■ COMM

文件：148.32 Kbytes 頁(yè)數(shù)：9 Pages

STMICROELECTRONICS

意法半導(dǎo)體

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION The SD1729 is a Class AB 28 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. ■ OPTIMIZED FOR SSB ■ 30 MHz ■ 28 VOLTS ■ IMD ?30 dB ■ COMMON

文件：49.63 Kbytes 頁(yè)數(shù)：4 Pages

STMICROELECTRONICS

意法半導(dǎo)體

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION The SD1730 is a 28 V epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. The devices utlizes emitter ballasting for improved ruggedness and reliability. ■ OPTIMIZED FOR SSB ■ 30 MHz ■ 28 VOLTS ■ IMD ?30dB ■ EFFICIENCY 40 ■ COMMON EMITTER ■

文件：77.37 Kbytes 頁(yè)數(shù)：6 Pages

STMICROELECTRONICS

意法半導(dǎo)體

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2

文件：81.99 Kbytes 頁(yè)數(shù)：7 Pages

STMICROELECTRONICS

意法半導(dǎo)體

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

文件：288.66 Kbytes 頁(yè)數(shù)：5 Pages

ETCList of Unclassifed Manufacturers

未分類(lèi)制造商

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION The SD1731 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ■ OPTIMIZED FOR SSB ■ 30 MHz ■ 50 VOLTS ■ EFFICIENCY 40 ■ COMMON EMITTER ■ GOLD METALLIZATION

文件：58.99 Kbytes 頁(yè)數(shù)：5 Pages

STMICROELECTRONICS

意法半導(dǎo)體