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          首頁(yè) >SD103CW>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          SD103CW

          SURFACE MOUNT SCHOTTKY BARRIER DIODE

          Features ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection ● Low Reverse Recovery Time ● Low Reverse Capacitance

          文件:995.06 Kbytes 頁(yè)數(shù):2 Pages

          SUNMATE

          森美特

          SD103CW

          Schottky Barrier Diode

          FEATURES ● Low Forward Voltage Drop. ● Guard Ring Construction For Transient Protection. ● Negligible Reverse Recovery Time. ● Low Reverse Capacitance. APPLICATIONS ● Schotty barrier switching.

          文件:148.11 Kbytes 頁(yè)數(shù):3 Pages

          BILIN

          銀河微電

          SD103CW

          TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER DIODES

          VOLTAGE RANGE - 20 to 40 Volts CURRENT - 0.35 Ampere FEATURES * For general purpose applications * Low turn-on voltage * Fast switching time * Protected by a PN junction guard ring against excessive voltage, such as electrostatic discharge(ESD)

          文件:246.99 Kbytes 頁(yè)數(shù):2 Pages

          DCCOM

          道全

          SD103CW

          SCHOTTKY BARRIER DIODE

          [Micro Electronic Instrument Inc.] VOLTAGE RANGE 20 To 40 Volts CURRENT 350 mA FEATURES ? Fast Switching speed ? Low forward voltage ? Low capacitance ? Guard ring for transient and ESD protection ? Also available in the DO-35 package as SD103A and Mini-Melf as LL103A

          文件:105.03 Kbytes 頁(yè)數(shù):2 Pages

          ETCList of Unclassifed Manufacturers

          未分類制造商

          SD103CW

          SCHOTTKY DIODES

          FEATURES ● Low forward voltage drop ● Guard ring construction for transient protection ● Negligible reverse recovery time ● Low reverse capacitance

          文件:435.21 Kbytes 頁(yè)數(shù):2 Pages

          HTSEMI

          金譽(yù)半導(dǎo)體

          SD103CW

          Schottky Barrier Diode

          Schottky Barrier Diode FEATURES ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection ● Negligible Reverse Recovery Time ● Low Capacitance

          文件:731.74 Kbytes 頁(yè)數(shù):4 Pages

          JIANGSU

          長(zhǎng)電科技

          SD103CW

          SMALL SIGNAL SCHOTTKY DIODES

          FEATURES ? For general purpose applications ? The SD103AW to SD103CW series is a Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, an

          文件:90.13 Kbytes 頁(yè)數(shù):1 Pages

          JINANJINGHENG

          晶恒集團(tuán)

          SD103CW

          Schottky Barrier Switching Diodes

          Schottky Barrier Switching Diodes Features Low forward voltage drop. Guard ring construction for transient protection. Negligible reverse recovery time.

          文件:37.58 Kbytes 頁(yè)數(shù):1 Pages

          KEXIN

          科信電子

          SD103CW

          SURFACE MOUNT SCHOTTKY BARRIER DIODES

          VOLTAGE 20 to 40 Volts CURRENT 0.35 Ampers FEATURES ? Low turn-on voltage ? Fast switching ? PN Junction Guard Ring for Transient and ESD Protection. ? In compliance with EU RoHS 2002/95/EC directives

          文件:62.68 Kbytes 頁(yè)數(shù):3 Pages

          PANJIT

          強(qiáng)茂

          SD103CW

          SURFACE MOUNT SCHOTTKY BARRIER

          FEATURES Low turn-on voltage Fast switching PN Junction Guard Ring for Transient and ESD Protection. Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free)

          文件:332.85 Kbytes 頁(yè)數(shù):5 Pages

          PANJIT

          強(qiáng)茂

          技術(shù)參數(shù)

          • Compliance (Only Automotive supports PPAP):

            Standard

          • Configuration:

            Single

          • Power Rating (μW):

            200 mW

          • Peak RepetitiveReverse VoltageVRRM (V):

            20 V

          • Forward Continuous Current IFM (mA):

            350 mA

          • Forward Voltage Drop VF (V):

            0.37

          • @ IF (A):

            20 mA

          • Maximum ReverseCurrent IR (μA):

            5 μA

          • @ VR (V):

            10 V

          • Capacitance CTOT Typ (pF):

            28 pF

          • Packages:

            SOD123

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          更多SD103CW供應(yīng)商 更新時(shí)間2026-1-19 15:09:00
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