絲印：S5；Package：SOD-323；SCHOTTKY BARRIER DIODE

FEATURES Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Reverse Capacitance

文件：877.26 Kbytes 頁數(shù)：4 Pages

SY

順燁電子

SCHOTTKY BARRIER DIODES

FEATURES : * For general purpose applications * The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. * The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for

文件：38.57 Kbytes 頁數(shù)：2 Pages

SYNSEMI

200mW SOD-323 SURFACE MOUNT Small Outline Flat Lead Plastic Package Schottky Barrier Diode

Specification Features: ■ Low Forward Voltage Drop ■ Flat Lead SOD-323 Small Outline Plastic Package ■ Surface Device Type Mounting ■ RoHS Compliant ■ Green EMC ■ Matte Tin(Sn) Terminal Finish ■ Band Indicates Cathode ■ Weight: approx. 0.004g

文件：145.63 Kbytes 頁數(shù)：4 Pages

TAK_CHEONG

德昌電子

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Low Forward Voltage Fast Switching Speed PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0

文件：94.83 Kbytes 頁數(shù)：4 Pages

WTE

Won-Top Electronics

Surface Mount Schottky Barrier Diode

Features ◇ Low Forward Voltage Drop ◇ Guard Ring Construction for Transient Protection ◇ Negligible Reverse Recovery Time ◇ Low Reverse Capacitance ◇ Ultra-Small Surface Mount Package

文件：184.09 Kbytes 頁數(shù)：2 Pages

LUGUANG

魯光電子

Surface Mount Schottky Barrier Diodes

Features ? Low Forward Voltage

文件：83.6 Kbytes 頁數(shù)：3 Pages

DGNJDZ

南晶電子

SCHOTTKY DIODES

FEATURES ? Low forward voltage drop ? Guard ring construction for transient protection ? Negligible reverse recovery time ? low reverse capacitance

文件：810.27 Kbytes 頁數(shù)：2 Pages

SHUNYE

順燁電子

SCHOTTKY DIODES

Features ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection ● Negligible Reverse Recovery Time ● Low Reverse Capacitance

文件：142.24 Kbytes 頁數(shù)：2 Pages

WINNERJOIN

永而佳

SCHOTTKY DIODES

FEATURES ● Low Forward Voltage Drop ● Guard Ring Construction For Transient Protection ● Negligible Reverse Recovery Time ● Low Reverse Capacitance APPLICATIONS ● Schotty barrier switching

文件：65.209 Kbytes 頁數(shù)：2 Pages

CHENDA

辰達半導體

Schottky Barrier Diode

FEATURES ● Low Forward Voltage Drop ● Guard Ring Construction For Transient Protection ● Negligible Reverse Recovery Time ● Low Reverse Capacitance APPLICATIONS ● Schotty barrier switching

文件：316.12 Kbytes 頁數(shù)：3 Pages

CHENDA

辰達半導體