200mW Small Signal Schottky Diode 40 Volts

Features ? Guard Ring Construction for Transient Protection ? Low Forward Voltage Drop ? Lead Free Finish/RoHS Compliant (P Suffix designates RoHS Compliant. See ordering information) ? Marking : S4 ? Epoxy meets UL 94 V-0 flammability rating ? Moisture Sensitivity Level 1 ? Halogen

文件：297.14 Kbytes 頁數(shù)：3 Pages

MCC

Schottky Barrier Diode

FEATURES ● Low forward voltage drop. ● Guard ring construction for transient protection. ● Low reverse recovery time. ● Low reverse capacitance. APPLICATIONS ● Schottky barrier application.

文件：198.55 Kbytes 頁數(shù)：3 Pages

BILIN

銀河微電

絲印：S4；Package：SOD-523；SCHOTTKY BARRIER RECTIFIER

Features High Current Capability Low Forward Voltage Drop

文件：460 Kbytes 頁數(shù)：2 Pages

DAESAN

SCHOTTKY BARRIER DIODE

FEATURES ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection ● Low Reverse Recovery Time ● Low Reverse Capacitance

文件：3.94926 Mbytes 頁數(shù)：1 Pages

HTSEMI

金譽半導(dǎo)體

SCHOTTKY BARRIER DIODE

SCHOTTKY BARRIER DIODE FEATURES ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection ● Low Reverse Recovery Time ● Low Reverse Capacitance

文件：682.47 Kbytes 頁數(shù)：4 Pages

JIANGSU

長電科技

絲?。?a target="_blank" title="Marking" href="/s4/marking.html">S4；Package：SOD-523；Low Forward Voltage Drop

FEATURES ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection ● Low Reverse Recovery Time ● Low Reverse Capacitance

文件：1.3036 Mbytes 頁數(shù)：5 Pages

LEIDITECH

雷卯電子

Schottky Plastic-Encapsulated Diode

FEATURES ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection ● Low Reverse Recovery Time ● Low Reverse Capacitance

文件：261.64 Kbytes 頁數(shù)：2 Pages

SECOS

喜可士

Schottky Barrier Diode

Features ◇ Low forward voltage drop. ◇ Guard ring construction for transient protection. ◇ Low reverse recovery time. ◇ Low reverse capacitance Applications ◇ Schottky barrier application.

文件：287.98 Kbytes 頁數(shù)：2 Pages

LUGUANG

魯光電子

Schottky Barrier Diode

FEATURES ● Low forward voltage drop. ● Guard ring construction for transient protection. ● Low reverse recovery time. ● Low reverse capacitance. APPLICATIONS ● Schottky barrier application.

文件：370.53 Kbytes 頁數(shù)：3 Pages

CHENDA

辰達(dá)半導(dǎo)體

Schottky Barrier Diode

FEATURES ● Low forward voltage drop. ● Guard ring construction for transient protection. ● Low reverse recovery time. ● Low reverse capacitance. APPLICATIONS ● Schottky barrier application.

文件：278.97 Kbytes 頁數(shù)：3 Pages

DSK