Surface Mount Schottky Barrier Diodes

SMALL SIGNAL SCHOTTKY DIODES 350m AMPERES 20-40 VOLTS Features: * Low Forward Voltage * Very Small Conduction Losses * Schottky Barrier Diodes Encapsulated in a SOD-123 Package

文件：79.54 Kbytes 頁數(shù)：3 Pages

WEITRON

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection ● Low Reverse Recovery Time ● Low Reverse Capacitance

文件：995.06 Kbytes 頁數(shù)：2 Pages

SUNMATE

森美特

Schottky Barrier Diode

FEATURES ● Low Forward Voltage Drop. ● Guard Ring Construction For Transient Protection. ● Negligible Reverse Recovery Time. ● Low Reverse Capacitance. APPLICATIONS ● Schotty barrier switching.

文件：148.11 Kbytes 頁數(shù)：3 Pages

BILIN

銀河微電

TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER DIODES

VOLTAGE RANGE - 20 to 40 Volts CURRENT - 0.35 Ampere FEATURES * For general purpose applications * Low turn-on voltage * Fast switching time * Protected by a PN junction guard ring against excessive voltage, such as electrostatic discharge(ESD)

文件：246.99 Kbytes 頁數(shù)：2 Pages

DCCOM

道全

SCHOTTKY BARRIER DIODE

[Micro Electronic Instrument Inc.] VOLTAGE RANGE 20 To 40 Volts CURRENT 350 mA FEATURES ? Fast Switching speed ? Low forward voltage ? Low capacitance ? Guard ring for transient and ESD protection ? Also available in the DO-35 package as SD103A and Mini-Melf as LL103A

文件：105.03 Kbytes 頁數(shù)：2 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

SCHOTTKY DIODES

FEATURES ● Low forward voltage drop ● Guard ring construction for transient protection ● Negligible reverse recovery time ● Low reverse capacitance

文件：435.21 Kbytes 頁數(shù)：2 Pages

HTSEMI

金譽半導(dǎo)體

Schottky Barrier Diode

Schottky Barrier Diode FEATURES ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection ● Negligible Reverse Recovery Time ● Low Capacitance

文件：731.74 Kbytes 頁數(shù)：4 Pages

JIANGSU

長電科技

SMALL SIGNAL SCHOTTKY DIODES

FEATURES ? For general purpose applications ? The SD103AW to SD103CW series is a Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, an

文件：90.13 Kbytes 頁數(shù)：1 Pages

JINANJINGHENG

晶恒集團

Schottky Barrier Switching Diodes

Schottky Barrier Switching Diodes Features Low forward voltage drop. Guard ring construction for transient protection. Negligible reverse recovery time.

文件：37.58 Kbytes 頁數(shù)：1 Pages

KEXIN

科信電子

SURFACE MOUNT SCHOTTKY BARRIER DIODES

VOLTAGE 20 to 40 Volts CURRENT 0.35 Ampers FEATURES ? Low turn-on voltage ? Fast switching ? PN Junction Guard Ring for Transient and ESD Protection. ? In compliance with EU RoHS 2002/95/EC directives

文件：62.68 Kbytes 頁數(shù)：3 Pages

PANJIT

強茂