Silicon carbide Power MOSFET 650 V, 18 mOhm typ., 40 A in a PowerFLAT 8x8 HV package

該碳化硅功率MOSFET晶體管采用ST先進(jìn)、創(chuàng)新的第二代碳化硅（SiC）MOSFET技術(shù)開發(fā)而成。該器件單位面積導(dǎo)通電阻極低且具有良好的開關(guān)性能。開關(guān)損耗的變化幾乎與結(jié)溫?zé)o關(guān)。 ? 穩(wěn)定的超快速本體二極管 \n? 低電容 \n? 源極感應(yīng)引腳可提高效率;

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絲?。?a target="_blank" title="Marking" href="/90n65g2v/marking.html">90N65G2V；Package：PowerFLAT8x8HV；Silicon carbide Power MOSFET 650 V, 18 m廓 typ., 40 A in a PowerFLAT 8x8 HV package

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Silicon carbide Power MOSFET 650 V, 119 A, 18 mΩ (typ., TJ = 25 °C)in an HiP247 package

Features ? Very high operating junction temperature capability (TJ = 200 °C) ? Very fast and robust intrinsic body diode ? Extremely low gate charge and input capacitances Applications ? Switching applications ? Power supply for renewable energy systems ? High frequency DC-DC converte

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Silicon carbide Power MOSFET 650 V, 119 A, 18 m廓 in an HiP247 long leads package

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