Silicon carbide Power MOSFET 650 V, 55 mOhm typ., 40 A in a PowerFLAT 8x8 HV package

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction t ? Very fast and robust intrinsic body diode \n? Low capacitances \n? Source sensing pin for increased efficiency;

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絲?。?a target="_blank" title="Marking" href="/35n65g2v/marking.html">35N65G2V；Package：PowerFLAT8x8HV；Silicon carbide Power MOSFET 650 V, 55 m廓 typ., 40 A in a PowerFLAT 8x8 HV package

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Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247 package

Features ? Very fast and robust intrinsic body diode ? Extremely low gate charge and input capacitance ? Very high operating junction temperature capability (TJ = 200°C) Applications ? Switching mode power supply ? DC-DC converters ? Industrial motor control

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Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 package

Features ? AEC-Q101 qualified ? Very fast and robust intrinsic body diode ? Low capacitance Applications ? Switching mode power supply ? EV chargers ? DC-DC converters Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generatio

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Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247 long leads package

Features ? Very fast and robust intrinsic body diode ? Extremely low gate charge and input capacitance ? Very high operating junction temperature capability (TJ = 200 °C) Applications ? Switching mode power supply ? DC-DC converters ? Industrial motor control

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STMICROELECTRONICS

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