絲印：SCT3080KR；Package：TO-247-4L；N-channel SiC power MOSFET

Features 5) Simple to drive 6) Pb-free lead plating ; RoHS compliant 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel Application ?Solar inverters ?DC/DC converters ?Switch mode power supplies ?Induction heating ?Motor drives

文件：934.02 Kbytes 頁(yè)數(shù)：13 Pages

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絲印：SCT3080KR；Package：TO-247-4L；Automotive Grade N-channel SiC power MOSFET

Features 1) Qualified to AEC-Q101 2) Low on-resistance 3) Fast switching speed 4) Fast reverse recovery 5) Easy to parallel 6) Simple to drive 7) Pb-free lead plating ; RoHS compliant Application ?Automobile ?Switch mode power supplies

文件：1.39067 Mbytes 頁(yè)數(shù)：17 Pages

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SiC N-Channel MOSFET

FEATURES · Fast Switching Speed · Fast Reverse Recovery · Easy to Parallel · Simple to Drive APPLICATIONS ·Automobile ·Switch Mode Power Supplies ·Motor drives

文件：365.72 Kbytes 頁(yè)數(shù)：4 Pages

ISC

無(wú)錫固電

1200V Nch 4引腳封裝 SiC（碳化硅）MOSFET

SCT3080KR是非常適用于要求高效率的服務(wù)器用電源、太陽(yáng)能逆變器及電動(dòng)汽車充電站等的溝槽柵結(jié)構(gòu)SiC MOSFET。采用電源源極引腳和驅(qū)動(dòng)器源極引腳分離的4引腳封裝，能夠充分地發(fā)揮出高速開關(guān)性能。尤其是可以顯著改善導(dǎo)通損耗。與以往的3引腳封裝（TO-247N）相比，導(dǎo)通損耗和關(guān)斷損耗合起來(lái)預(yù)計(jì)可降低約35％的損耗。 ? Low on-resistance\n? Fast reverse recovery\n? Simple to drive\n? High efficiency 4pin package\n? Evaluation board 'P02SCT3040KR-EVK-001';

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1200V, 31A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

AEC-Q101 qualified automotive grade product. SCT3080KRHR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed. ? Qualified to AEC-Q101\n? Low on-resistance\n? Fast switching speed\n? Fast reverse recovery\n? Easy to parallel\n? Simple to drive\n? Pb-free lead plating ; RoHS compliant;

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