isc N-Channel SiC SMOSFET Transistor

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絲?。?a target="_blank" title="Marking" href="/sct3060ar/marking.html">SCT3060AR；Package：TO-247-4L；N-channel SiC power MOSFET

Features 5) Simple to drive 6) Pb-free lead plating ; RoHS compliant 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel Application ?Solar inverters ?DC/DC converters ?Switch mode power supplies ?Induction heating ?Motor drives

文件：932.66 Kbytes 頁(yè)數(shù)：13 Pages

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N-channel SiC power MOSFET

Features 5) Simple to drive 6) Pb-free lead plating ; RoHS compliant 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel Application ?Solar inverters ?DC/DC converters ?Switch mode power supplies ?Induction heating ?Motor drives

文件：932.66 Kbytes 頁(yè)數(shù)：13 Pages

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絲印：SCT3060AR；Package：TO-247-4L；Automotive Grade N-channel SiC power MOSFET

Features 1) Qualified to AEC-Q101 2) Low on-resistance 3) Fast switching speed 4) Fast reverse recovery 5) Easy to parallel 6) Simple to drive 7) Pb-free lead plating ; RoHS compliant Application ?Automobile ?Switch mode power supplies

文件：1.39163 Mbytes 頁(yè)數(shù)：17 Pages

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N-channel SiC power MOSFET

文件：736.51 Kbytes 頁(yè)數(shù)：14 Pages

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絲?。?a target="_blank" title="Marking" href="/sct3060aw7/marking.html">SCT3060AW7；Package：TO-263-7L；N-channel SiC power MOSFET

文件：1.52426 Mbytes 頁(yè)數(shù)：14 Pages

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N-channel SiC（碳化硅）功率MOSFET

SCT3060AL是650V 39A的Nch SiC功率MOSFET。 ? Low on-resistance\n? Fast switching speed\n? Fast reverse recovery\n? Easy to parallel\n? Simple to drive\n? Pb-free lead plating ; RoHS compliant;

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650V Nch 4引腳封裝 SiC（碳化硅）MOSFET

SCT3060AR是非常適用于要求高效率的服務(wù)器用電源、太陽(yáng)能逆變器及電動(dòng)汽車(chē)充電站等的溝槽柵結(jié)構(gòu)SiC MOSFET。采用電源源極引腳和驅(qū)動(dòng)器源極引腳分離的4引腳封裝，能夠充分地發(fā)揮出高速開(kāi)關(guān)性能。尤其是可以顯著改善導(dǎo)通損耗。與以往的3引腳封裝（TO-247N）相比，導(dǎo)通損耗和關(guān)斷損耗合起來(lái)預(yù)計(jì)可降低約35％的損耗。 ? Low on-resistance\n? Fast reverse recovery\n? Simple to drive\n? High efficiency 4pin package\n? Evaluation board 'P02SCT3040KR-EVK-001'\n;

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650V 38A, 7端子SMD, 溝槽結(jié)構(gòu), SiC-MOSFET

SCT3060AW7是650V 38A的Nch SiC功率MOSFET。采用溝槽結(jié)構(gòu)，降低了導(dǎo)通電阻。\n\n SiC支持頁(yè)面\n\n評(píng)估板、文件 應(yīng)用實(shí)例介紹\n\n羅姆制SiC元器件 何謂SiC功率元器件？\n\n電子小知識(shí)#banner-area a:link {text-decoration: none !important;}#banner-area a {width: 160px;padding: 4px;margin: 5px 2px;text-align: center;font-size: 9px;color: #464646 !important;line-height: ? Low on-resistance\n? Fast switching speed\n? Fast reverse recovery\n? Easy to parallel\n? Simple to drive\n? Pb-free lead plating ; RoHS compliant;

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