650V/10A SiC Schottky Barrier Diode

Features Halogen Free, RoHS Compliant Low Forward Voltage (VF) Shorter recovery time High speed switching High surge current capability Enabling higher frequency and increased power density System efficiency improvement System cost and size savings due to the reduced cooling requirements

文件：362.18 Kbytes 頁數(shù)：4 Pages

GWSEMI

唯圣電子

650V/10A SiC Schottky Barrier Diode

Features Low Forward Voltage (VF) Shorter recovery time High speed switching High surge current capability Enabling higher frequency and increased power density System efficiency improvement System cost and size savings due to the reduced cooling requirements Halogen Free, RoHS Compliant

文件：359.3 Kbytes 頁數(shù)：4 Pages

GWSEMI

唯圣電子

650V/10A SiC Schottky Barrier Diode

Features Low Forward Voltage (VF) Shorter recovery time High speed switching High surge current capability Enabling higher frequency and increased power density System efficiency improvement System cost and size savings due to the reduced cooling requirements Halogen Free, RoHS Compliant

文件：323.89 Kbytes 頁數(shù)：4 Pages

GWSEMI

唯圣電子

650V/10A SiC Schottky Barrier Diode

Features Halogen Free, RoHS Compliant Low Forward Voltage (VF) Shorter recovery time High speed switching High surge current capability Enabling higher frequency and increased power density System efficiency improvement System cost and size savings due to the reduced cooling requirements

文件：334.07 Kbytes 頁數(shù)：4 Pages

GWSEMI

唯圣電子

50V/15A Switching Applications

50V/15A Switching Applications Features ? Low-saturation collector-to-emitter voltage : VCE(sat) =–0.5V max. ? Wide ASO leading to high resistance to breakdown. Applications ? Relay drivers, high-speed inverters, converters, and other general high-current switching applications.

文件：107.33 Kbytes 頁數(shù)：3 Pages

SANYO

三洋