General-Purpose Switching Device Applications

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features ? Composite type with a N-Channel Silicon MOSFET (SCH1419) and a Schottky Barrier Diode (SS0503) contained in one package facilitating high-density mounting. ? [MOSFET] ? Low ON-resistance. ? Ultrahigh-speed switch

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ONSEMI

安森美半導(dǎo)體

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device

MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode Features ? Composite type with a N-Channel Silicon MOSFET (SCH1419) and a Schottky Barrier Diode (SS0503) contained in one package facilitating high-density mounting. ? [MOSFET] ? Low ON-resistance. ? Ultrahigh-speed switch

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SANYO

三洋

General-Purpose Switching Device Applications

ONSEMI

安森美半導(dǎo)體

ECL

Description The SJ-2810 Series of quartz crystal oscillators provide ECL 10K and 10KH series compatible signals in a ceramic SMD package. Systems designers may now specify space-saving, cost-effective packaged ECL oscillators to meet their timing requirements. Features ? Wide frequency range–18

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NEL

WR-28 to WR-19 Waveguide Taper Transition

Transitions Description: Model SWT-2819-LB is a WR-28 to WR-19 rectangular waveguide taper transition. The taper transition is manufactured by either EDM machining or electro-forming techniques to ensure high accuracy and a quality surface finish. The transition only induces a fraction of a dB i

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ERAVANT

100W Peak Power, 20W Average Power

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TRIQUINT