| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
SCH1433 | Single N-Channel Power MOSFET This low-profile high-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ultra low on resistance requirements. Features ? 文件:524.22 Kbytes 頁(yè)數(shù):5 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | |
SCH1433 | General-Purpose Switching Device Applications N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features ? 1.8V drive. ? Halogen free compliance. 文件:288.6 Kbytes 頁(yè)數(shù):4 Pages | SANYO 三洋 | SANYO | |
SCH1433 | SCH1433: Power MOSFET, 20V, 64mΩ, 3.5A, Single N-Channel This low-profile high-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ultra low on resistance requirements. 1.8V drive\nDrive at Low Voltage\nPb-Free, Halogen Free and RoHS compliance\nEnvironmental Consideration\nESD Diode-Protected Gate\nESD Resistance\nLow Capacitance\nEase of drive, faster turn-on/turn-off\nUltra small package SCH6 (1.6mm x 1.6mm x 0.56mmt)\nBoard Space Saving\nLow On-Resistance; | ONSEMI 安森美半導(dǎo)體 | ONSEMI | |
Single N-Channel Power MOSFET This low-profile high-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ultra low on resistance requirements. Features ? 文件:524.22 Kbytes 頁(yè)數(shù):5 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Single N-Channel Power MOSFET This low-profile high-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ultra low on resistance requirements. Features ? 文件:524.22 Kbytes 頁(yè)數(shù):5 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Package:SOT-563,SOT-666;包裝:卷帶(TR) 類別:分立半導(dǎo)體產(chǎn)品 晶體管 - FET,MOSFET - 單個(gè) 描述:MOSFET N-CH 20V 3.5A SCH6 | ONSEMI 安森美半導(dǎo)體 | ONSEMI |
技術(shù)參數(shù)
- Compliance:
Pb-freeHalide free
- Status:
?Active??
- Description:
?Power MOSFET
- Channel Polarity:
N-Channel
- Configuration:
Single
- V(BR)DSS Min (V):
20
- VGS Max (V):
10
- VGS(th) Max (V):
1.3
- ID Max (A):
3.5
- PD Max (W):
Condition
- GS = 2.5 V\ style=\cursor:
help\>RDS(on) Max @ VGS = 2.5 V(mΩ)
- GS = 4.5 V\ style=\cursor:
help\>RDS(on) Max @ VGS = 4.5 V(mΩ)
- GS = 10 V\ style=\cursor:
help\>RDS(on) Max @ VGS = 10 V(mΩ)
- GS = 4.5 V\ style=\cursor:
help\>Qg Typ @ VGS = 4.5 V (nC)
- GS = 10 V\ style=\cursor:
help\>Qg Typ @ VGS = 10 V (nC)
- Ciss Typ (pF):
Condition
- Package Type:
SOT-563 / SCH-6
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
SANYO |
25+ |
SOT23-6 |
9878 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可 |
詢價(jià) | ||
ON |
24+/25+ |
5000 |
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu) |
詢價(jià) | |||
ON |
1716+ |
? |
7500 |
只做原裝進(jìn)口,假一罰十 |
詢價(jià) | ||
SANYO |
23+ |
SOT23-6 |
8650 |
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣! |
詢價(jià) | ||
三年內(nèi) |
1983 |
只做原裝正品 |
詢價(jià) | ||||
SANYO/三洋 |
20+ |
SCH6 |
36800 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票 |
詢價(jià) | ||
ON |
25+ |
SMD-6 |
6675 |
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件! |
詢價(jià) | ||
ON |
21+ |
SOT563 |
1000 |
絕對(duì)有現(xiàn)貨,不止網(wǎng)上數(shù)量!原裝正品,假一賠十! |
詢價(jià) | ||
ONN |
24+ |
6992 |
絕對(duì)進(jìn)口原裝,現(xiàn)貨熱銷 |
詢價(jià) | |||
ON/安森美 |
23+ |
SOT-563 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) |
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