| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
SCH1430 | Single N-Channel Power MOSFET Power MOSFET 20V, 125m?, 2A, Single N-Channel This low-profile high-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ult 文件:533.76 Kbytes 頁(yè)數(shù):5 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | |
SCH1430 | General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features ? 1.8V drive ? Halogen free compliance 文件:415.43 Kbytes 頁(yè)數(shù):4 Pages | SANYO 三洋 | SANYO | |
SCH1430 | Power MOSFET, 20V, 125mΩ, 2A, Single N-Channel This low-profile high-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ultra low on resistance requirements. Low On-Resistance\nImproves Efficiency by Reducing Conduction Losses, Reduces Heat Dissipation\n1.8V drive\nDrive at Low Voltage\nESD Diode-Protected Gate\nESD Resistance\nPb-Free, Halogen Free and RoHS compliance\nEnvironmental Consideration\nUltra small package SCH6 (1.6mm×1.6mm×0.56mmt)\nBoard Sp; | ONSEMI 安森美半導(dǎo)體 | ONSEMI | |
Single N-Channel Power MOSFET Power MOSFET 20V, 125m?, 2A, Single N-Channel This low-profile high-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ult 文件:533.76 Kbytes 頁(yè)數(shù):5 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Single N-Channel Power MOSFET Power MOSFET 20V, 125m?, 2A, Single N-Channel This low-profile high-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ult 文件:533.76 Kbytes 頁(yè)數(shù):5 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI |
技術(shù)參數(shù)
- Compliance:
Pb-freeHalide free
- Status:
?Active??
- Description:
?Power MOSFET
- Channel Polarity:
N-Channel
- Configuration:
Single
- V(BR)DSS Min (V):
20
- VGS Max (V):
12
- VGS(th) Max (V):
1.3
- ID Max (A):
2
- PD Max (W):
Condition
- GS = 2.5 V\ style=\cursor:
help\>RDS(on) Max @ VGS = 2.5 V(mΩ)
- GS = 4.5 V\ style=\cursor:
help\>RDS(on) Max @ VGS = 4.5 V(mΩ)
- GS = 10 V\ style=\cursor:
help\>RDS(on) Max @ VGS = 10 V(mΩ)
- GS = 4.5 V\ style=\cursor:
help\>Qg Typ @ VGS = 4.5 V (nC)
- GS = 10 V\ style=\cursor:
help\>Qg Typ @ VGS = 10 V (nC)
- Ciss Typ (pF):
Condition
- Package Type:
SOT-563 / SCH-6
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
ON |
24+/25+ |
5000 |
原裝正品現(xiàn)貨庫(kù)存價(jià)優(yōu) |
詢價(jià) | |||
ON |
1708+ |
? |
7500 |
只做原裝進(jìn)口,假一罰十 |
詢價(jià) | ||
三年內(nèi) |
1983 |
只做原裝正品 |
詢價(jià) | ||||
SANYO |
19+ |
SCH6 |
200000 |
詢價(jià) | |||
SANYO/三洋 |
20+ |
SCH6 |
36800 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票 |
詢價(jià) | ||
ON Semiconductor |
2010+ |
N/A |
2638 |
加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購(gòu)物 |
詢價(jià) | ||
ON |
25+ |
SMD-6 |
6675 |
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件! |
詢價(jià) | ||
ONN |
24+ |
3944 |
絕對(duì)進(jìn)口原裝,現(xiàn)貨熱銷 |
詢價(jià) | |||
ON/安森美 |
23+ |
SOT563 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
ON/安森美 |
2022+ |
12500 |
原廠原裝,假一罰十 |
詢價(jià) |
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