SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features low feedback and output capacitances, re

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POLYFET

4A低電壓，超低導通電阻負載開關(guān)

Contact your local Sales Representative for full product specifications. ·Input voltage range — 1.7V to 5.5V\n·4A continuous output current\n·Ultra-Low Rdson — 8mOhm \n·Constant Rdson over wide VIN range\n·Optional output discharge circuit·SC701 — Automatic output discharge\n·SC701H — No output discharge circuit\n\n·Low shutdown current\n·Low quiescent current\n·Package:;

Semtech

先之科

VDMOS SHORTFORM S1

Polyfet RF Devices

RF POWER VDMOS TRANSISTOR

文件：61.41 Kbytes 頁數(shù)：2 Pages

POLYFET

2x 6.35mm (1?4) Mono Jack Plugs to 2x Phono Plugs Lead

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PROSIGNAL

DC-DC降壓芯片

ZGS

中廣芯源

Package：6-WFBGA，CSPBGA；包裝：卷帶（TR） 類別：集成電路（IC） 配電開關(guān)，負載驅(qū)動器 描述：IC PWR N-CH 1:1 6CSP TAPE\u0026REEL

Semtech Corporation

Package：6-WFBGA，CSPBGA；包裝：卷帶（TR） 類別：集成電路（IC） 配電開關(guān)，負載驅(qū)動器 描述：IC PWR SWITCH N-CHAN 1:1 6CSP

Semtech Corporation