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    首頁 >MC14069>規(guī)格書列表

    型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

    MC14069

    Hex Inverter

    The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagat

    文件:171.8 Kbytes 頁數(shù):8 Pages

    ONSEMI

    安森美半導(dǎo)體

    MC14069UB

    Hex Inverter

    The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagat

    文件:171.8 Kbytes 頁數(shù):8 Pages

    ONSEMI

    安森美半導(dǎo)體

    MC14069UBCP

    Hex Inverter

    The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagat

    文件:171.8 Kbytes 頁數(shù):8 Pages

    ONSEMI

    安森美半導(dǎo)體

    MC14069UBD

    Hex Inverter

    The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagat

    文件:171.8 Kbytes 頁數(shù):8 Pages

    ONSEMI

    安森美半導(dǎo)體

    MC14069UBDR2

    Hex Inverter

    The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagat

    文件:171.8 Kbytes 頁數(shù):8 Pages

    ONSEMI

    安森美半導(dǎo)體

    MC14069UBDT

    Hex Inverter

    The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagat

    文件:171.8 Kbytes 頁數(shù):8 Pages

    ONSEMI

    安森美半導(dǎo)體

    MC14069UBDTEL

    Hex Inverter

    The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagat

    文件:171.8 Kbytes 頁數(shù):8 Pages

    ONSEMI

    安森美半導(dǎo)體

    MC14069UBDTR2

    Hex Inverter

    The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagat

    文件:171.8 Kbytes 頁數(shù):8 Pages

    ONSEMI

    安森美半導(dǎo)體

    MC14069UBF

    Hex Inverter

    The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagat

    文件:171.8 Kbytes 頁數(shù):8 Pages

    ONSEMI

    安森美半導(dǎo)體

    MC14069UBFEL

    Hex Inverter

    The MC14069UB hex inverter is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These inverters find primary use where low power dissipation and/or high noise immunity is desired. Each of the six inverters is a single stage to minimize propagat

    文件:171.8 Kbytes 頁數(shù):8 Pages

    ONSEMI

    安森美半導(dǎo)體

    技術(shù)參數(shù)

    • Pb-free:

      Pb

    • AEC Qualified:

      A

    • Halide free:

      H

    • PPAP Capablee:

      P

    • Status:

      Active

    • Type:

      Inverter

    • Channels:

      6

    • VCC Min (V):

      3

    • VCC Max (V):

      18

    • tpd Max (ns):

      100

    • IO Max (mA):

      null

    • Package Type:

      SOIC-14

    供應(yīng)商型號品牌批號封裝庫存備注價格
    24+
    SMD14
    3000
    公司現(xiàn)貨
    詢價
    ON
    24+
    DIP
    5000
    全現(xiàn)原裝公司現(xiàn)貨
    詢價
    ON
    24+
    SO-14
    50000
    一級代理進口原裝現(xiàn)貨假一賠十
    詢價
    ON
    19+
    SOP
    5000
    只做原裝可拆樣品
    詢價
    MOT
    25+
    SOP16
    4500
    全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售!
    詢價
    ON
    23+
    SOP
    11000
    正品原裝貨價格低
    詢價
    MOTOLORA
    2025+
    SOP16
    4816
    全新原廠原裝產(chǎn)品、公司現(xiàn)貨銷售
    詢價
    MOT
    2410+
    DIP
    6800
    優(yōu)勢代理渠道 原裝現(xiàn)貨 可全系列訂貨
    詢價
    MOTOROLA/摩托羅拉
    2450+
    SOP
    6540
    只做原裝正品現(xiàn)貨!或訂貨假一賠十!
    詢價
    ON
    2012+
    DIP-14
    10000
    全新原裝,公司大量現(xiàn)貨供應(yīng),絕對正品
    詢價
    更多MC14069供應(yīng)商 更新時間2026-1-21 16:01:00

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