ELECTRICALLY ERASABLE PROGRAMMABLE MEMORIES

[SIERRA SEMICONDUCTOR]

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ELECTRICALLY ERASABLE PROGRAMMABLE MEMORIES

[SIERRA SEMICONDUCTOR]

文件：309.24 Kbytes 頁數(shù)：5 Pages

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Phoneme Speech synthesizer

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CMOS 4 x 4 x 2 Crosspoint Switch with Control Memory

Description CD22101 and CD22102 crosspoint switches consist of 4 x 4 x 2 arrays of crosspoints (transmission gates) with a 4-line to 16-line decoder and 16 latch circuits. Any one of the sixteen crosspoint pairs can be selected by applying the appropriate four-line address, corresponding crosspoi

文件：159.07 Kbytes 頁數(shù)：13 Pages

HARRIS

CMOS 4 x 4 x 2 Crosspoint Switch with Control Memory

Description CD22101 and CD22102 crosspoint switches consist of 4 x 4 x 2 arrays of crosspoints (transmission gates) with a 4-line to 16-line decoder and 16 latch circuits. Any one of the sixteen crosspoint pairs can be selected by applying the appropriate four-line address, corresponding crosspoi

文件：159.07 Kbytes 頁數(shù)：13 Pages

HARRIS

CMOS 4 x 4 x 2 Crosspoint Switch with Control Memory

Description CD22101 and CD22102 crosspoint switches consist of 4 x 4 x 2 arrays of crosspoints (transmission gates) with a 4-line to 16-line decoder and 16 latch circuits. Any one of the sixteen crosspoint pairs can be selected by applying the appropriate four-line address, corresponding crosspoi

文件：159.07 Kbytes 頁數(shù)：13 Pages

HARRIS