FAST RECOVERY DIODE

Features ● Surface mount device ● High voltage by mesa design ● High reliability Applications ● High speed switching

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FUJI

富士通

SILICON GATE ENHANCEMENT MODE

General Description Silicon VDMOS transistor designed specifically for Broadband RF applications. Suitable for Military Radios, Cellular Base Staions, Broadcast FM/AM, MRI, Laser Drivers and others. Polyfet process features low feedback and output capacitances, resulting in high Ft transistors w

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POLYFET

觸摸芯片

ICman

晶尊微

100/101, 200/201, 300/301 Threaded Diaphragm Seal

FEATURES ? 316L Stainless steel top housing (standard) ? Available in wide range of wetted materials for process compatibility ? Flushing port (101, 201, 301) provides for easy cleaning of process ? Continuous duty design contains process if instrument is inadvertantly removed ? NSF-61 Compli

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ASHCROFT

雅斯科

100/101, 200/201, 300/301 Threaded Diaphragm Seal

FEATURES ? 316L Stainless steel top housing (standard) ? Available in wide range of wetted materials for process compatibility ? Flushing port (101, 201, 301) provides for easy cleaning of process ? Continuous duty design contains process if instrument is inadvertantly removed ? NSF-61 Compli

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ASHCROFT

雅斯科

Silicon Carbide Schottky Diode

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JINGHENG

晶恒

高度集成的USB PD控制器

SC2010A是一個高度集成的USB PD控制器。它符合最新的USB Type-C和PD 3.0，并支持最流行的高壓快速充電協(xié)議，具有多達(dá)3組DPDM接口。SC2010適用于適配器、手機充電器、車載充電器和移動電源。SC2010的額定電壓為30V。通過集成USB PD基帶物理層（PHY），Type-C檢測，電壓電流檢測，10位高性能ADC, 調(diào)節(jié)VBUS 的PWM輸出，最多2路N_MOS驅(qū)動，VBUS泄放電路，I2C接口和保護電路等以減少外部器件。嵌入式32位高性能微控制器提供32k 字節(jié)的OTP，為許多應(yīng)用提供了經(jīng)濟有效的解決方案。支持各種保護機制，包括過壓保護，過流保護，短路保護，過溫保護 ? USB Type-C端口\n √ 支持Type-C DRP協(xié)議\n √ 可配置RP和RD\n √ 死電池時支持Rd\n\n? USB功率分配（PD）\n √ 支持DFP / UFP/ DRP USB 3.0 PD\n √ 硬件BMC發(fā)射端和接收端\n √ 物理層完整功能\n √ 硬件CRC\n √ 硬件復(fù)位\n √ 集成PD 3.0協(xié)議\n √ 支持SOP '，兼容E-marker\n\n? 3組DPDM快速充電端口\n √ 3組軟件控制DPDM端口\n √ 支持蘋果充電, BC1.2, DCP, HVDCP, FC, AFC, FCP.SCP,VOOC,UART,和其他專用充電協(xié)議\n\;

SouthChip

南芯科技

通用厚膜電阻

SUNWAY

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