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          首頁(yè) >SBR8>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          SBR8M100P5Q

          SBR8M100P5Q SUPER BARRIER RECTIFIER PowerDI5

          Features Low Forward Voltage Drop Excellent High Temperature Stability Patented Super Barrier Rectifier SBR? Technology Soft, Fast Switching Capability Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The SBR8M100P5Q is suitable for automotiv

          文件:492.42 Kbytes 頁(yè)數(shù):6 Pages

          DIODES

          美臺(tái)半導(dǎo)體

          SBR8M100P5Q-13

          絲?。?a target="_blank" title="Marking" href="/s8m100/marking.html">S8M100;Package:PowerDI5;SBR8M100P5Q SUPER BARRIER RECTIFIER PowerDI5

          Features Low Forward Voltage Drop Excellent High Temperature Stability Patented Super Barrier Rectifier SBR? Technology Soft, Fast Switching Capability Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The SBR8M100P5Q is suitable for automotiv

          文件:492.42 Kbytes 頁(yè)數(shù):6 Pages

          DIODES

          美臺(tái)半導(dǎo)體

          SBR8M100P5Q-13D

          絲?。?a target="_blank" title="Marking" href="/s8m100/marking.html">S8M100;Package:PowerDI5;SBR8M100P5Q SUPER BARRIER RECTIFIER PowerDI5

          Features Low Forward Voltage Drop Excellent High Temperature Stability Patented Super Barrier Rectifier SBR? Technology Soft, Fast Switching Capability Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) The SBR8M100P5Q is suitable for automotiv

          文件:492.42 Kbytes 頁(yè)數(shù):6 Pages

          DIODES

          美臺(tái)半導(dǎo)體

          SBR8U20SP5Q

          8A SBR? SUPER BARRIER RECTIFIER POWERDI?5

          Features 100 Avalanche Tested. Patented SBR technology provides a superior avalanche capability than schottky diodes ensuring more rugged and reliable end applications. Reduced Ultra-low forward voltage drop (VF); better efficiency and cooler operation. Reduced high temperature reverse leak

          文件:136.3 Kbytes 頁(yè)數(shù):5 Pages

          DIODES

          美臺(tái)半導(dǎo)體

          SBR8U20SP5Q-13

          8A SBR? SUPER BARRIER RECTIFIER POWERDI?5

          Features 100 Avalanche Tested. Patented SBR technology provides a superior avalanche capability than schottky diodes ensuring more rugged and reliable end applications. Reduced Ultra-low forward voltage drop (VF); better efficiency and cooler operation. Reduced high temperature reverse leak

          文件:136.3 Kbytes 頁(yè)數(shù):5 Pages

          DIODES

          美臺(tái)半導(dǎo)體

          SBR8U60P5Q

          8A SBR SUPER BARRIER RECTIFIER PowerDI5

          Features 100 Avalanche Tested. Patented SBR ? technology provides a superior avalanche capability than Schottky diodes ensuring more rugged and reliable end applications. Reduced ultra-low forward voltage drop (VF); better efficiency and cooler operation. Reduced high temperature reverse

          文件:529.51 Kbytes 頁(yè)數(shù):6 Pages

          DIODES

          美臺(tái)半導(dǎo)體

          SBR8U60P5Q-13

          絲?。?a target="_blank" title="Marking" href="/s8u60/marking.html">S8U60;Package:PowerDI5;8A SBR SUPER BARRIER RECTIFIER PowerDI5

          Features 100 Avalanche Tested. Patented SBR ? technology provides a superior avalanche capability than Schottky diodes ensuring more rugged and reliable end applications. Reduced ultra-low forward voltage drop (VF); better efficiency and cooler operation. Reduced high temperature reverse

          文件:529.51 Kbytes 頁(yè)數(shù):6 Pages

          DIODES

          美臺(tái)半導(dǎo)體

          SBR8U60P5Q-13D

          絲?。?a target="_blank" title="Marking" href="/s8u60/marking.html">S8U60;Package:PowerDI5;8A SBR SUPER BARRIER RECTIFIER PowerDI5

          Features 100 Avalanche Tested. Patented SBR ? technology provides a superior avalanche capability than Schottky diodes ensuring more rugged and reliable end applications. Reduced ultra-low forward voltage drop (VF); better efficiency and cooler operation. Reduced high temperature reverse

          文件:529.51 Kbytes 頁(yè)數(shù):6 Pages

          DIODES

          美臺(tái)半導(dǎo)體

          SBR8040

          80 Amp Schottky Rectifier

          文件:140.58 Kbytes 頁(yè)數(shù):2 Pages

          MICROSEMI

          美高森美

          SBR8040_07

          80 Amp Schottky Rectifier

          文件:140.58 Kbytes 頁(yè)數(shù):2 Pages

          MICROSEMI

          美高森美

          技術(shù)參數(shù)

          • Peak Reverse Repetitive Voltage:

            40V

          • Peak Reverse Current:

            2000uA

          • Peak Non-Repetitive Surge Current:

            1200A

          • Peak Forward Voltage:

            0.74V

          • Operating Junction Temperature:

            -65 to 175°C

          • Minimum Operating Temperature:

            -65°C

          • Maximum Operating Temperature:

            175°C

          • Maximum Continuous Forward Current:

            80A

          • Configuration:

            Single

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          更多SBR8供應(yīng)商 更新時(shí)間2026-1-19 15:30:00
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