| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
12A SBR SUPER BARRIER RECTIFIER POWERDI5 Features 100 Avalanche Tested Patented SBR Technology Provides a Superior Avalanche Capability Than Schottky Diodes Ensuring More Rugged and Reliable End Applications Reduced Ultra-low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation Reduced High Temperature Reverse Leakage 文件:682.42 Kbytes 頁數(shù):6 Pages | DIODES 美臺半導(dǎo)體 | DIODES | ||
絲?。?a target="_blank" title="Marking" href="/s12u100/marking.html">S12U100;Package:PowerDI5;12A SBR SUPER BARRIER RECTIFIER POWERDI5 Features 100 Avalanche Tested Patented SBR Technology Provides a Superior Avalanche Capability Than Schottky Diodes Ensuring More Rugged and Reliable End Applications Reduced Ultra-low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation Reduced High Temperature Reverse Leakage 文件:682.42 Kbytes 頁數(shù):6 Pages | DIODES 美臺半導(dǎo)體 | DIODES | ||
絲?。?a target="_blank" title="Marking" href="/s12u100/marking.html">S12U100;Package:PowerDI5;12A SBR SUPER BARRIER RECTIFIER POWERDI5 Features 100 Avalanche Tested Patented SBR Technology Provides a Superior Avalanche Capability Than Schottky Diodes Ensuring More Rugged and Reliable End Applications Reduced Ultra-low Forward Voltage Drop (VF); Better Efficiency and Cooler Operation Reduced High Temperature Reverse Leakage 文件:682.42 Kbytes 頁數(shù):6 Pages | DIODES 美臺半導(dǎo)體 | DIODES | ||
12A SBR? SUPER BARRIER RECTIFIER POWERDI?5SP-B Features Designed as bypass diodes for solar panels Low profile height (0.75mm) and 7.6mm protruding leads, enabling the package to be integrated within the solar glass panel Selectively rated for +200°C maximum junction temperature for high thermal reliability and excellent high temperature 文件:251.5 Kbytes 頁數(shù):5 Pages | DIODES 美臺半導(dǎo)體 | DIODES | ||
絲?。?a target="_blank" title="Marking" href="/12u45lh1/marking.html">12U45LH1;Package:POWERDI5SP;12A SBR? SUPER BARRIER RECTIFIER POWERDI?5SP-B Features Designed as bypass diodes for solar panels Low profile height (0.75mm) and 7.6mm protruding leads, enabling the package to be integrated within the solar glass panel Selectively rated for +200°C maximum junction temperature for high thermal reliability and excellent high temperature 文件:251.5 Kbytes 頁數(shù):5 Pages | DIODES 美臺半導(dǎo)體 | DIODES | ||
STANDARD SHAFT SEALS ?DESCRIPTION The SBR profile is a shaft seal composed of a single external metal cage with a rubber coating on the inside and the end of the cage, and a primary sealing lip with integrated spring. ?APPLICATIONS Shaft sealing Engines Pumps Transmissions 文件:305.55 Kbytes 頁數(shù):5 Pages | FRANCEJOINT | FRANCEJOINT | ||
High Voltage Fast-Switching NPN Power Transistor General Description This devices is designed for high voltage, high speed switching characteristic required such as lighting system, switching regulator, inverter and deflection circuit. Features - Very High Switching Speed (Typical [email protected]) - Minimum Lot-to-Lot hFE Variation - Low VCE(sat 文件:713.87 Kbytes 頁數(shù):6 Pages | SEMIWELL 矽門微 | SEMIWELL | ||
High Voltage Fast-Switching NPN Power Transistor General Description This devices is designed for high voltage, high speed switching characteristic required such as lighting system, switching regulator, inverter and deflection circuit. Features ◆ Very High Switching Speed (Typical [email protected]) ◆ Minimum Lot-to-Lot hFE Variation ◆ Low VCE(sat 文件:461.06 Kbytes 頁數(shù):5 Pages | SEMIWELL 矽門微 | SEMIWELL | ||
High Voltage Fast -Switching NPN Power Transistor General Description This Device is designed for high voltage ,High speed switching characteristics required such as lighting system,switching mode power supply. Features ■ Very High Switching Speed ■ High Voltage Capability ■ Wide Reverse Bias SOA 文件:264.94 Kbytes 頁數(shù):5 Pages | WINSEMIShenzhen Wenxian Microelectronics Co., Ltd 穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司 | WINSEMI | ||
High Voltage Fast -Switching NPN Power Transistor General Description This Device is designed for high voltage, High speed switching characteristics required such as lighting system,switching mode power supply. Features ■ Very High Switching Speed ■ High Voltage Capability ■ Wide Reverse Bias SOA 文件:417.46 Kbytes 頁數(shù):5 Pages | WINSEMIShenzhen Wenxian Microelectronics Co., Ltd 穩(wěn)先微電子深圳市穩(wěn)先微電子有限公司 | WINSEMI |
技術(shù)參數(shù)
- Continuous Forward Current:
1.0 A
- Diode Forward Voltage:
0.66 V
- Peak Surge Current:
40 A
- Reverse Current:
2 uA
- Operating Temperature:
175°C
- Package:
SOD-123HE
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
TI/德州儀器 |
QFN |
6698 |
詢價 | ||||
DIODES/美臺 |
2022+ |
TO227 |
18000 |
原裝正品 |
詢價 | ||
DIODES |
23+ |
TO-220 |
30000 |
原裝正品,假一罰十 |
詢價 | ||
DIODES/美臺 |
24+ |
SOD123 |
9600 |
原裝現(xiàn)貨,優(yōu)勢供應(yīng),支持實單! |
詢價 | ||
DIODES/美臺 |
25+ |
SMA |
4616 |
就找我吧!--邀您體驗愉快問購元件! |
詢價 | ||
apd |
25+ |
220 |
30000 |
代理原裝現(xiàn)貨 價格優(yōu)勢 |
詢價 | ||
DIODES |
25+ |
DFN3030-4 |
90000 |
一級代理商進口原裝現(xiàn)貨、假一罰十價格合理 |
詢價 | ||
DIODES/美臺 |
22+ |
TO-252 |
12500 |
原裝正品支持實單 |
詢價 | ||
MOTOROLA |
22+ |
D2PAK |
3000 |
原裝正品,支持實單 |
詢價 | ||
DIODES |
24+ |
ITO-220FP- |
12000 |
原裝正品 假一罰十 可拆樣 |
詢價 |
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