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          首頁(yè) >SB25>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          SB250A-G

          Leaded Schottky Barrier Rectifiers

          Features - Low drop down voltage. - Metal-Semiconductor junction with guard ring - High surge current capability - Silicon epitaxial planar chips. - For use in low voltage, high efficiency inverters, free wheeling, and polarity protection applications - Lead-free part, meet RoHS requirem

          文件:59.95 Kbytes 頁(yè)數(shù):3 Pages

          COMCHIP

          典琦

          SB250B-G

          Leaded Schottky Barrier Rectifiers

          Features - Low drop down voltage. - Metal-Semiconductor junction with guard ring - High surge current capability - Silicon epitaxial planar chips. - For use in low voltage, high efficiency inverters, free wheeling, and polarity protection applications - Lead-free part, meet RoHS requirem

          文件:59.95 Kbytes 頁(yè)數(shù):3 Pages

          COMCHIP

          典琦

          SB250E

          SCHOTTKY BARRIER RECTIFIERS

          VOLTAGE 20 to 60 Volts CURRENT 2.0 Amperes FEATURES ? Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. ? Exceeds environmental standards of MIL-S-19500/228 ? For use in low voltage,high frequency inverters ,

          文件:64.599 Kbytes 頁(yè)數(shù):2 Pages

          PANJIT

          強(qiáng)茂

          SB250EA-G

          ESD Leaded Schottky Barrier Rectifiers

          Voltage: 20 to 100 V Current: 2.0 A RoHS Device Features - Low drop down voltage. - For use in low voltage, high frequency invertors free wheeling and polarity protection. - Silicon epitaxial planar chips. - ESD test under IEC6100-4-2 : Standard: >15KV(Air) & 8KV(Contact) Mecha

          文件:77.23 Kbytes 頁(yè)數(shù):3 Pages

          COMCHIP

          典琦

          SB250EB-G

          ESD Leaded Schottky Barrier Rectifiers

          Voltage: 20 to 100 V Current: 2.0 A RoHS Device Features - Low drop down voltage. - For use in low voltage, high frequency invertors free wheeling and polarity protection. - Silicon epitaxial planar chips. - ESD test under IEC6100-4-2 : Standard: >15KV(Air) & 8KV(Contact) Mecha

          文件:77.23 Kbytes 頁(yè)數(shù):3 Pages

          COMCHIP

          典琦

          SB250ET-G

          ESD Leaded Schottky Barrier Rectifiers

          Voltage: 20 to 100 V Current: 2.0 A RoHS Device Features - Low drop down voltage. - For use in low voltage, high frequency invertors free wheeling and polarity protection. - Silicon epitaxial planar chips. - ESD test under IEC6100-4-2 : Standard: >15KV(Air) & 8KV(Contact) Mecha

          文件:77.23 Kbytes 頁(yè)數(shù):3 Pages

          COMCHIP

          典琦

          SB250H

          SCHOTTKY BARRIER RECTIFIERS

          SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 100 Volts CURRENT 2.0 Amperes FEATURES ? Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. ? Exceeds environmental standards of MIL-S-19500/228 ? For use in low volta

          文件:52.7 Kbytes 頁(yè)數(shù):2 Pages

          PANJIT

          強(qiáng)茂

          SB250S

          2.0A SCHOTTKY BARRIER DIODE

          Schottky Barrier Chip Guard Ring for Transient and ESD Protection Surge Overload Rating to 50A Peak Low Power Loss, High Efficiency Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

          文件:54.15 Kbytes 頁(yè)數(shù):4 Pages

          WTE

          Won-Top Electronics

          SB250S

          Schottky Barrier Rectifier

          FEATURES ? Guardring for overvoltage protection ? Very small conduction losses ? Extremely fast switching ? Low forward voltage drop ? High forward surge capability ? High frequency operation ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? Compliant to RoHS directive 2002/95/EC and in ac

          文件:94.5 Kbytes 頁(yè)數(shù):4 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          SB250S

          Schottky Barrier Plastic Rectifier

          FEATURES ? Guardring for overvoltage protection ? Very small conduction losses ? Extremely fast switching ? Low forward voltage drop ? High forward surge capability ? High frequency operation ? Solder dip 275 °C max. 10 s, per JESD 22-B106 ? Material categorization: for definitions of comp

          文件:75.7 Kbytes 頁(yè)數(shù):4 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          技術(shù)參數(shù)

          • @IR(μA):

            500

          • VF(V):

            0.7

          • If(A):

            2

          • TRR(nS):

            0

          • Io(A):

            2

          • IFSM(A):

            50

          • Package:

            SMB

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          更多SB25供應(yīng)商 更新時(shí)間2021-9-14 10:50:00
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