絲?。?strong>SB1；Package：UFV；Schottky Barrier Diode Silicon Epitaxial

文件：154.95 Kbytes 頁數：6 Pages

TOSHIBA

東芝

絲?。?a target="_blank" title="Marking" href="/sb1065ct/marking.html">SB1065CT；Package：TO-220AB；10A High Power Schottky Barrier Rectifiers

Features ? Low power loss, high efficiency. ? High current capability, low forward voltage drop. ? High surge capability. ? Guardring for overvoltage protection. ? Ultra high-speed switching. ? Silicon epitaxial planar chip, metal silicon junction. ? Suffix G indicates Halogen-free p

文件：96.77 Kbytes 頁數：3 Pages

CITC

竹懋科技

絲?。?a target="_blank" title="Marking" href="/sb1040ct/marking.html">SB1040CT；Package：TO-220AB；10A High Power Schottky Barrier Rectifiers

Features ? Low power loss, high efficiency. ? High current capability, low forward voltage drop. ? High surge capability. ? Guardring for overvoltage protection. ? Ultra high-speed switching. ? Silicon epitaxial planar chip, metal silicon junction. ? Suffix G indicates Halogen-free p

文件：96.77 Kbytes 頁數：3 Pages

CITC

竹懋科技

絲?。?a target="_blank" title="Marking" href="/sb1045ct/marking.html">SB1045CT；Package：TO-220AB；10A High Power Schottky Barrier Rectifiers

Features ? Low power loss, high efficiency. ? High current capability, low forward voltage drop. ? High surge capability. ? Guardring for overvoltage protection. ? Ultra high-speed switching. ? Silicon epitaxial planar chip, metal silicon junction. ? Suffix G indicates Halogen-free p

文件：96.77 Kbytes 頁數：3 Pages

CITC

竹懋科技

絲?。?a target="_blank" title="Marking" href="/sb1060ct/marking.html">SB1060CT；Package：TO-220AB；10A High Power Schottky Barrier Rectifiers

Features ? Low power loss, high efficiency. ? High current capability, low forward voltage drop. ? High surge capability. ? Guardring for overvoltage protection. ? Ultra high-speed switching. ? Silicon epitaxial planar chip, metal silicon junction. ? Suffix G indicates Halogen-free p

文件：96.77 Kbytes 頁數：3 Pages

CITC

竹懋科技

絲?。?a target="_blank" title="Marking" href="/sb110s/marking.html">SB110S；Package：MBS；Bridge Rectifiers

Features ● UL recognition,file #E313149 ● Ideal for automated placement ● High surge current capability ● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Typical Applications General purpose use in high frequency AC/DC bridge full wave rectification for power supply, lighting b

文件：883.66 Kbytes 頁數：3 Pages

SAMYANG

三陽電子

絲?。?a target="_blank" title="Marking" href="/sb115s/marking.html">SB115S；Package：MBS；Bridge Rectifiers

Features ● UL recognition,file #E313149 ● Ideal for automated placement ● High surge current capability ● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Typical Applications General purpose use in high frequency AC/DC bridge full wave rectification for power supply, lighting b

文件：883.66 Kbytes 頁數：3 Pages

SAMYANG

三陽電子

絲?。?a target="_blank" title="Marking" href="/sb120s/marking.html">SB120S；Package：MBS；Bridge Rectifiers

Features ● UL recognition,file #E313149 ● Ideal for automated placement ● High surge current capability ● Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Typical Applications General purpose use in high frequency AC/DC bridge full wave rectification for power supply, lighting b

文件：883.66 Kbytes 頁數：3 Pages

SAMYANG

三陽電子

絲?。?a target="_blank" title="Marking" href="/sb1240/marking.html">SB1240；Package：DO-201AD；Schottky Diodes

Features High frequency operation Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Solder dip 275 °C max. 7s, per JESD 22-B106

文件：2.19051 Mbytes 頁數：3 Pages

RFE

RFE international

絲印：SB12；Package：SMAF-C；Surface Mount Schottky Barrier Rectifier

Features ? Low power loss, high efficiency ? High surge current capability ? Lead free in compliance with EU RoHS 2.0 ? Green molding compound as per IEC 61249 standard

文件：457.61 Kbytes 頁數：4 Pages

PANJIT

強茂