| 型號(hào) | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
90V, 500mA Rectifier 90V, 500mA Rectifier Features ? Low forward voltage (VF max=0.7V). ? Fast reverse recorvery time (trr max=10ns). ? Low switching noise. ? Low leakage current and high reliability due to highly reliable planar structure. Applications ? High frequency rectification (switching regulators, conv 文件：58.4 Kbytes 頁數(shù)：2 Pages | SANYO 三洋 | SANYO | ||
Schottky Barrier Diode 90V, 0.5A Rectifier 90V, 0.5A Rectifier Features ? Fast reverse recovery time (trr max=20ns). ? Low switching noise. ? Low leakage current and high reliability due to highly reliable planar structure. Applications ? High frequency rectification (switching regulators, converters, choppers). 文件：33.19 Kbytes 頁數(shù)：3 Pages | SANYO 三洋 | SANYO | ||
180V, 500mA Rectifier 180V, 500mA Rectifier Features ? Low forward voltage (VF max=0.85V). ? Fast revese recovery time (trr max=20ns). ? Low switching noise. ? Low leakage current and high reliability due to highly reliable planar structure. Applications ? High frequency rectification (switching regulators, conv 文件：65.099 Kbytes 頁數(shù)：2 Pages | SANYO 三洋 | SANYO | ||
180V, 500mA Rectifier? 180V, 500mA Rectifier Features ? Low forward voltage (VF max=0.85V). ? Fast reverse recovery time (trr max=20ns). ? Low switching noise. ? Low leakage current and high reliability due to highly reliable planar structure. Applications ? High frequency rectification (switching regulators, con 文件：65.26 Kbytes 頁數(shù)：2 Pages | SANYO 三洋 | SANYO | ||
Schottky cr Barrier Diode Wafer 51 Mils, 15 Volt, 1 Amp, 0.30VF. Features Oxide Passivated Junction Very Low Forward Voltage 125 o C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier >1000V ESD (MM) 文件：155.39 Kbytes 頁數(shù)：1 Pages | TEL | TEL | ||
Schottky cr Barrier Diode Wafer 51 Mils, 20 Volt, 1 Amp, 0.32VF. Features Oxide Passivated Junction Very Low Forward Voltage 125 o C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier >1000V ESD (MM) 文件：155.76 Kbytes 頁數(shù)：1 Pages | TEL | TEL | ||
Schottky cr Barrier Diode Wafer 51 Mils, 25 Volt, 1 Amp, 0.33VF. Features Oxide Passivated Junction Very Low Forward Voltage 125 o C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier >1000V ESD (MM) 文件：155.74 Kbytes 頁數(shù)：1 Pages | TEL | TEL | ||
Schottky Barrier Diode Wafer 51 Mils, 150 Volt, 2 Amp Features Oxide Passivated Junction Low Forward Voltage 150 o C Junction Operating Low Reverse Leakage Supplied as Wafers Platinum Barrier 文件：155.36 Kbytes 頁數(shù)：1 Pages | TEL | TEL | ||
Schottky Barrier Diode Wafer 51 Mils, 200 Volt, 2 Amp Features Oxide Passivated Junction Low Forward Voltage 150 o C Junction Operating Low Reverse Leakage Supplied as Wafers Platinum Barrier 文件：155.36 Kbytes 頁數(shù)：1 Pages | TEL | TEL | ||
Schottky Barrier Diode Wafer 51 Mils, 200 Volt, 2 Amp Features Oxide Passivated Junction Low Forward Voltage 150 o C Junction Operating Low Reverse Leakage Supplied as Wafers Platinum Barrier 文件：155.36 Kbytes 頁數(shù)：1 Pages | TEL | TEL |
技術(shù)參數(shù)
- Inductance：
1.0uH-820uH
- RDC Range：
25.0mΩ-12.6Ω
- Rated Current：
0.1A-2.8A
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
SANYO |
24+ |
23 |
3000 |
本站現(xiàn)庫存 |
詢價(jià) | ||
SANYO |
SOT-23 |
68500 |
一級(jí)代理 原裝正品假一罰十價(jià)格優(yōu)勢長期供貨 |
詢價(jià) | |||
SANYO |
25+ |
SOT89 |
890 |
百分百原裝正品 真實(shí)公司現(xiàn)貨庫存 本公司只做原裝 可 |
詢價(jià) | ||
SANYO |
17+ |
SOT-23 |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
SANYO |
23+ |
SOT23 |
17280 |
原裝正品,假一罰十 |
詢價(jià) | ||
HITACHI |
24+ |
SOT-323 |
5720 |
原裝現(xiàn)貨假一罰十 |
詢價(jià) | ||
SANYO |
2016+ |
SOT23 |
2800 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價(jià) | ||
MIT |
07PB |
SOT23/SOT323 |
2145 |
全新原裝進(jìn)口自己庫存優(yōu)勢 |
詢價(jià) | ||
SANYO |
05+ |
原廠原裝 |
2451 |
只做全新原裝真實(shí)現(xiàn)貨供應(yīng) |
詢價(jià) | ||
SANYO |
1706+ |
? |
6500 |
只做原裝進(jìn)口,假一罰十 |
詢價(jià) |
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