GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR VOLTAGE - 5.0 TO 170 Volts

VOLTAGE - 5.0 TO 170 Volts 500Watt Peak Power 3.0 Watt Steady State Feature * Plastic package has Underwriters Laboratory Flammability Classification 94V-O * Glass passivated chip junction in DO-15 package * 500W surge capability at 1ms * Excellent clamping capability * Low zener impedan

文件：189.61 Kbytes 頁(yè)數(shù)：9 Pages

LRC

樂(lè)山無(wú)線電

Axial Lead Transient Voltage Suppressors (TVS)

Description The SA series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. Features ? Glass passivated chip junction in DO-15 Package ? Low leakage ? Uni and Bidirectional unit ? Excellent clam

文件：646.25 Kbytes 頁(yè)數(shù)：6 Pages

UNSEMI

優(yōu)恩半導(dǎo)體

5.0 To 190V 500W Axial Lead Transient Voltage Suppressors (TVS)

Features Glass passivated chip junction in DO-15 Package Low leakage Uni and Bidirectional unit Excellent clamping capability 500W Peak power capability at 10 × 1000μs waveform Repetition rate (duty cycle):0.01% Fast response time: typically less than 1.0ps from 0 Volts to VBR min Typi

文件：3.57065 Mbytes 頁(yè)數(shù)：7 Pages

UNSEMI

優(yōu)恩半導(dǎo)體

Axial Lead Transient Voltage Suppressors (TVS)

Description The SA series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. Features ? Glass passivated chip junction in DO-15 Package ? Low leakage ? Uni and Bidirectional unit ? Excellent clam

文件：475.54 Kbytes 頁(yè)數(shù)：6 Pages

SOCAY

碩凱股份

2.5GHz low voltage fractional-N synthesizer

GENERAL DESCRIPTION The SA8016 BICMOS device integrates programmable dividers, charge pumps and a phase comparator to implement a phase-locked loop. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 3 V supplies. FEATURES ? Low phase noise ? Lo

文件：252.14 Kbytes 頁(yè)數(shù)：20 Pages

PHI

PHI

2.5GHz low voltage fractional-N synthesizer

GENERAL DESCRIPTION The SA8016 BICMOS device integrates programmable dividers, charge pumps and a phase comparator to implement a phase-locked loop. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 3 V supplies. FEATURES ? Low phase noise ? Lo

文件：252.14 Kbytes 頁(yè)數(shù)：20 Pages

PHI

PHI

2.5GHz low voltage fractional-N synthesizer

GENERAL DESCRIPTION The SA8016 BICMOS device integrates programmable dividers, charge pumps and a phase comparator to implement a phase-locked loop. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 3 V supplies. FEATURES ? Low phase noise ? Lo

文件：252.14 Kbytes 頁(yè)數(shù)：20 Pages

PHI

PHI

Low-voltage 1.8GHz fractional-N synthesizer

DESCRIPTION The SA8025A is a monolithic low power, high performance dual frequency synthesizer fabricated in QUBiC BiCMOS technology. The SA8025A is an improved version of the SA8025, suitable for narrow band systems like the Japan Personal Digital Cellular (PDC) system. The new design improves t

文件：456.79 Kbytes 頁(yè)數(shù)：23 Pages

PHI

PHI

Low-voltage 1.8GHz fractional-N synthesizer

DESCRIPTION The SA8025A is a monolithic low power, high performance dual frequency synthesizer fabricated in QUBiC BiCMOS technology. The SA8025A is an improved version of the SA8025, suitable for narrow band systems like the Japan Personal Digital Cellular (PDC) system. The new design improves t

文件：456.79 Kbytes 頁(yè)數(shù)：23 Pages

PHI

PHI

2.5GHz low voltage fractional-N dual frequency synthesizer

GENERAL DESCRIPTION The SA8026 BICMOS device integrates programmable dividers, charge pumps and a phase comparator to implement a phase-locked loop. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 3 V supplies. FEATURES ? Low phase noise ? Lo

文件：289.07 Kbytes 頁(yè)數(shù)：18 Pages

PHI

PHI