Low Frequency, Low Noise Amplifier

Low Frequency, Low Noise Amplifier ? Complement to SS9014

文件：65.43 Kbytes 頁數(shù)：4 Pages

FAIRCHILD

仙童半導(dǎo)體

PNP (LOW FREQUENCY, LOW NOISE AMPLIFIER)

LOW FREQUENCY, LOW NOISE AMPLIFIER ? Complement to SS9014

文件：229.85 Kbytes 頁數(shù)：6 Pages

SAMSUNG

三星

PNP General Purpose Transistors

文件：877.84 Kbytes 頁數(shù)：4 Pages

WEITRON

絲印：M6；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ● Complementary To S9014. ● Excellent HFE Linearity. ● Power dissipation.(PC=0.2W) APPLICATIONS ● Low frequency , low noise amplifier.

文件：187.26 Kbytes 頁數(shù)：4 Pages

BILIN

銀河微電

TRANSISTOR(PNP)

FEATURES Complementary to S9014

文件：647.69 Kbytes 頁數(shù)：2 Pages

HTSEMI

金譽半導(dǎo)體

TRANSISTOR (PNP)

FEATURES High total power dissipation.(PC=0.45W) High hFE and good linearity Complementary to S9014

文件：277.7 Kbytes 頁數(shù)：2 Pages

PFS

平盛電子

Low Frequency, Low Noise Amplifier

FEATURES Power dissipation PCM : 0.2 W Collector Current ICM : -0.1 A Collector-base voltage V(BR)CBO : -50 V Operating & storage junction temperature Tj, Tstg : - 55℃ ~ + 150℃

文件：234.45 Kbytes 頁數(shù)：2 Pages

SECOS

喜可士

絲?。?a target="_blank" title="Marking" href="/m6/marking.html">M6；Package：SOT-23；TRANSISTOR (PNP)

FEATURES Complementary to S9014

文件：861.09 Kbytes 頁數(shù)：4 Pages

SY

順燁電子

PNP EPITAXIAL PLANAR TRANSISTOR

Description The S9015 is designed for use in pre-amplifier of low level and low noise. Features ? High Total Power Dissipation. (PD:450mW) ? Complementary to S9014 ? High hFE and Good Linearity. Absolute Maximum Ratings ? Maximum Temperatures Storage Temperature ...........................

文件：50.27 Kbytes 頁數(shù)：3 Pages

TGS

TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 0.45 W (Tamb=25℃) Collector current ICM: -0.1 A Collector-base voltage V(BR)CBO: -50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：150.66 Kbytes 頁數(shù)：1 Pages

WINNERJOIN

永而佳