Silicon NPN Planar RF Transistor

Features ● Low supply voltage ● Low current consumption ● 50 Ω input impedance at 945 MHz ● Low noise figure ● High power gain Applications ?? For low noise and high gain broadband amplifiers at ?? collector currents from 0.2 mA to 5 mA.

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VISHAYVishay Siliconix

威世威世科技公司

Silicon NPN Planar RF Transistor

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VISHAYVishay Siliconix

威世威世科技公司

20V, 1A Rectifi er

20V, 1A Rectifier Features ? Low forward voltage (IF=0.5A, VF max=0.39V) (IF=1A, VF max=0.46V). ? Composite type with 2 low VF SBDs in one package, facilitating high-density mounting. ? Ultrasmall-size package permitting applied sets to be small and slim (Mounting height 0.85mm). ? Halogen fr

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SANYO

三洋

Schottky Barrier Diode

Features ? Low forward voltage (IF=0.5A, VF max=0.39V) (IF=1A, VF max=0.46V). ? Composite type with 2 low VF SBDs in one package, facilitating high-density mounting. ? Ultrasmall-size package permitting applied sets to be small and slim (Mounting height 0.85mm). ? Halogen free compliance. App

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ONSEMI

安森美半導(dǎo)體

Schottky Barrier Diode

Features ? Low forward voltage (IF=0.5A, VF max=0.39V) (IF=1A, VF max=0.46V). ? Composite type with 2 low VF SBDs in one package, facilitating high-density mounting. ? Ultrasmall-size package permitting applied sets to be small and slim (Mounting height 0.85mm). ? Halogen free compliance. App

文件：202.82 Kbytes 頁數(shù)：4 Pages

ONSEMI

安森美半導(dǎo)體