Schottky Diode

Mospec

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Dual Low-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier

FEATURES ? Trench MOS Schottky technology ? Very low profile - typical height of 1.7 mm ? Ideal for automated placement ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified available:? -

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VISHAYVishay Siliconix

威世威世科技公司

Dual Low-Voltage TMBS? (Trench MOS Barrier Schottky) Rectifier

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VISHAYVishay Siliconix

威世威世科技公司

40A DUAL SCHOTTKY BARRIER RECTIFIER

Features ? Schottky Barrier Chip ? Guard Ring for Transient Protection ? Low Forward Voltage Drop ? Low Power Loss, High Efficiency ? High Surge Current Capability ? Epoxy Meets UL 94V-0 Classification ? Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

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WTE

Won-Top Electronics

Schottky Barrier Rectifiers

SCHOTTKY BARRIER RECTIFIERS 40 AMPERES 30-60 VOLTS Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectificati

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MOSPEC

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Switchmode Dual Schottky Barrier Power Rectifiers

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MOSPEC

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