SiC Schottky Barrier Diode

Applications ? Power Factor Correction ? Solar Inverters ? Uninterruptible Power Supplies ? DC-DC Converters Features Chip design of 3rd generation Low forward voltage : VF = 1.2 V (typ.) Low total capacitive charge: Qc = 9nC (typ.) Low reverse current: IR = 0.4 μA (typ.)

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東芝

絲?。?strong>S3E65H；Package：TO-220-2L；SiC Schottky Barrier Diode

Applications ? Power Factor Correction ? Solar Inverters ? Uninterruptible Power Supplies ? DC-DC Converters Features Chip design of 3rd generation Low forward voltage : VF = 1.2 V (typ.) Low total capacitive charge: Qc = 9nC (typ.) Low reverse current: IR = 0.4 μA (typ.)

文件：415.57 Kbytes 頁數(shù)：7 Pages

TOSHIBA

東芝

SiC Schottky Barrier Diode

FEATURES · High Surge Current Capability · Positive Temperature Coefficient · The Reverse Current is Small APPLICATIONS · Solar Inverter · Power Factor Correction · DC-DC Converters · Uninterruptible Power Supplies

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SiC Schottky Barrier Diode

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TOSHIBA

東芝

SiC Schottky Barrier Diode

Applications ? Power Factor Correction ? Solar Inverters ? Uninterruptible Power Supplies ? DC-DC Converters Features Chip design of 3rd generation Low forward voltage : VF = 1.2 V (typ.) Low total capacitive charge: Qc = 9nC (typ.) Low reverse current: IR = 0.4 μA (typ.)

文件：415.57 Kbytes 頁數(shù)：7 Pages

TOSHIBA

東芝