650V SIC POWER SCHOTTKY RECTIFIER

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Terminals finish: 100% Pure Tin Pb ? Free Device All SMC parts are traceable to the wafer l

文件：1.205 Mbytes 頁數(shù)：7 Pages

SMCDIODE

桑德斯微電子

650V SIC POWER SCHOTTKY RECTIFIER

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Terminals finish: 100% Pure Tin Pb ? Free Device All SMC parts are traceable to the wafer l

文件：1.25832 Mbytes 頁數(shù)：6 Pages

SMCDIODE

桑德斯微電子

650V SIC POWER SCHOTTKY RECTIFIER

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Terminals finish: 100% Pure Tin Pb ? Free Device All SMC parts are traceable to the wafer l

文件：1.25832 Mbytes 頁數(shù)：6 Pages

SMCDIODE

桑德斯微電子

Silicon Carbide Schottky Diode

Z-REC? RECTIFIERS and ZERO-RECOVERY? RECTIFIERS SILICON CARBIDE Z-FET? MOSFET

文件：544.13 Kbytes 頁數(shù)：6 Pages

CREE

科銳

Z-RecTM Rectifiers and Zero-Recovery? Rectifiers

Z-REC? RECTIFIERS and ZERO-RECOVERY? RECTIFIERS SILICON CARBIDE Z-FET? MOSFET

文件：291.41 Kbytes 頁數(shù)：2 Pages

CREE

科銳

3rd Generation 650 V, 8 A Silicon Carbide Schottky

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

文件：1.97855 Mbytes 頁數(shù)：9 Pages

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