絲?。?strong>S31；Package：SOD-323；SCHOTTKY BARRIER DIODE

Features Low current rectifier schottky diode Low voltage, low inductance For power supply

文件：759.26 Kbytes 頁數(shù)：4 Pages

SY

順燁電子

絲印：S31；1 A very low dropout fast transient ultra-low noise linear regulator

Description The LD56100 high accuracy voltage regulator provides 1 A of current from an input voltage ranging from 1.8 V to 5.5 V, with a typical dropout voltage of 120 mV. It is available in DFN8 (1.2 x 1.6 mm) package, allowing the maximum space saving. The device is stabilized with a cerami

文件：1.5688 Mbytes 頁數(shù)：22 Pages

STMICROELECTRONICS

意法半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/s3100/marking.html">S3100；Package：POWERDI5；3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

Features Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency Low Reverse Leakage Current Low Forward Voltage Drop High Forward Surge Current Capability Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualifi

文件：218.18 Kbytes 頁數(shù)：5 Pages

DIODES

美臺半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/s3100/marking.html">S3100；Package：POWERDI5；3A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER

Features Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency Low Reverse Leakage Current Low Forward Voltage Drop High Forward Surge Current Capability Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualifi

文件：218.18 Kbytes 頁數(shù)：5 Pages

DIODES

美臺半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/s310/marking.html">S310；Package：SOD-123FL；Surface Mount Schottky Rectifiers

Features Low profile package Ideal for automated placement Guardring for overvoltage protection Low power losses, high efficiency High forward surge capability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

文件：2.84071 Mbytes 頁數(shù)：3 Pages

RFE

RFE international

絲?。?a target="_blank" title="Marking" href="/s310f/marking.html">S310F；Package：SMAF；Surface Mount Schottky Rectifiers

Features Low profile package Ideal for automated placement Guardring for overvoltage protection Low power losses, high efficiency High forward surge capability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

文件：2.86606 Mbytes 頁數(shù)：3 Pages

RFE

RFE international

絲?。?a target="_blank" title="Marking" href="/s310b/marking.html">S310B；Package：SMBF；SMD Schottky Barrier Rectifiers

Features - Metal silicon junction, majority carrier conduction. - For surface mounted applications. - Low power loss, high efficiency. - High forward surge current capability. - For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications.

文件：473.32 Kbytes 頁數(shù)：4 Pages

COMCHIP

典琦

絲印：S310B；Package：SMBF；Surface Mount Schottky Barrier Rectifier

Features Metal silicon junction, majority carrier conduction For surface mounted applications Low power loss, high efficiency High forward surge current capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications

文件：2.36802 Mbytes 頁數(shù)：4 Pages

UNSEMI

優(yōu)恩半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/s310/marking.html">S310；Package：SOD-123FL；SMD Schottky Barrier Rectifiers

Features - Metal silicon junction, majority carrier conduction. - For surface mounted applications. - Low power loss, high efficiency. - High forward surge current capability. - For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications.

文件：466.18 Kbytes 頁數(shù)：4 Pages

COMCHIP

典琦

絲?。?a target="_blank" title="Marking" href="/s312b/marking.html">S312B；Package：SMBF；Surface Mount Schottky Barrier Rectifier

Features Metal silicon junction, majority carrier conduction For surface mounted applications Low power loss, high efficiency High forward surge current capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications

文件：2.36802 Mbytes 頁數(shù)：4 Pages

UNSEMI

優(yōu)恩半導(dǎo)體