S29GL032A11BFIR21中文資料飛索數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

General Description

The S29GL-A family of devices are 3.0 V single power Flash memory manufactured using 200 nm MirrorBit technology. The S29GL064A is a 64-Mb device organized as 4,194,304 words or 8,388,608 bytes. The S29GL032A is a 32-Mb device organized as 2,097,152 words or 4,194,304 bytes. The S29Gl016A is a 16 Mb device organized as 1,048,576 words or 2,097,152 bytes. Depending on the model number, the devices have an 8-bit wide data bus only, 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The devices can be programmed either in the host system or in standard EPROM programmers.

Distinctive Characteristics

Architectural Advantages

■ Single power supply operation

— 3 volt read, erase, and program operations

■ Manufactured on 200 nm MirrorBit process technology

■ Secured Silicon Sector region

— 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence

— May be programmed and locked at the factory or by the customer

■ Flexible sector architecture

— 64Mb (uniform sector models): 128 32 Kword (64 KB) sectors

— 64Mb (boot sector models): 127 32 Kword (64 KB) sectors + 8 4Kword (8KB) boot sectors

— 32Mb (uniform sector models): 64 32Kword (64KB) sectors

— 32Mb (boot sector models): 63 32Kword (64KB) sectors + 8 4Kword (8KB) boot sectors

— 16MB (boot sector models): 31 31Kword (64KB) sectors + 8 4Kword (8KB) boot sectors

■ Compatibility with JEDEC standards

— Provides pinout and software compatibility for singlepower supply flash, and superior inadvertent write protection

■ 100,000 erase cycles typical per sector

■ 20-year data retention typical Performance Characteristics

■ High performance

— 90 ns access time

— 4-word/8-byte page read buffer

— 25 ns page read times

— 16-word/32-byte write buffer which reduces overall programming time for multiple-word updates

■ Low power consumption (typical values at 3.0 V, 5 MHz)

— 18 mA typical active read current

— 50 mA typical erase/program current

— 1 μA typical standby mode current

■ Package options

— 48-pin TSOP

— 56-pin TSOP

— 64-ball Fortified BGA

— 48-ball fine-pitch BGA

Software & Hardware Features

■ Software features

— Program Suspend & Resume: read other sectors before programming operation is completed

— Erase Suspend & Resume: read/program other sectors before an erase operation is completed

— Data# polling & toggle bits provide status

— CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices

— Unlock Bypass Program command reduces overall multiple-word programming time

■ Hardware features

— Sector Group Protection: hardware-level method of preventing write operations within a sector group

— Temporary Sector Unprotect: VID-level method of charging code in locked sectors

— WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings on uniform sector models

— Hardware reset input (RESET#) resets device

— Ready/Busy# output (RY/BY#) detects program or erase cycle completion