絲?。?strong>S10；Package：SOT23；60V N-Channel MOSFET

Application Load/Power Switching Interfacing Switching Battery Management for Ultra Small Portable Logic Level Shift

文件：2.42861 Mbytes 頁數(shù)：6 Pages

TECHPUBLIC

臺舟電子

絲印：S10；Package：SOT-23；N-Channel Enhancement Mode MOSFET

Feature Advanced Trench Process Technology Low Threshold Voltage Fast Switching Speed Halogen-Free & Lead-Free Applications Load Switch for Portable Devices Voltage controlled small signal switch

文件：4.88631 Mbytes 頁數(shù)：8 Pages

UNSEMI

優(yōu)恩半導(dǎo)體

絲?。?strong>S10；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

文件：884.84 Kbytes 頁數(shù)：6 Pages

FUTUREWAFER

絲印：S10；Package：SOT-23；N-Channel MOSFET

文件：190.84 Kbytes 頁數(shù)：3 Pages

FS

絲?。?strong>S10；Package：SOT-23；N-Enhancement Mode Field Effect Transistor

文件：2.80081 Mbytes 頁數(shù)：6 Pages

PJSEMI

平晶半導(dǎo)體

絲印：S10；1.0 Amp Surface Mount Schottky Barrier Rectifiers

文件：259.11 Kbytes 頁數(shù)：2 Pages

SECOS

喜可士

絲?。?strong>S10；Package：SOT-23；N-Channel Enhancement Mode Field Effect Transistor

文件：588.99 Kbytes 頁數(shù)：6 Pages

YANGJIE

揚(yáng)杰電子

絲印：S10.；Package：SOT-23；MOSFET

Features - High density cell design for low RDS(ON). - Excellent package for heat dissipation.

文件：573.99 Kbytes 頁數(shù)：6 Pages

COMCHIP

典琦

絲?。?a target="_blank" title="Marking" href="/s100/marking.html">S100；Package：SMA；Schottky Rectifier

Description The SS12?S100 series includes high?efficiency, low power loss, general?propose schottky rectifiers. The clip?bonded leg structure provides high thermal performance and low electrical resistance. These rectifiers are suited for free wheeling, secondary rectification, and reverse po

文件：131.63 Kbytes 頁數(shù)：5 Pages

ONSEMI

安森美半導(dǎo)體

絲印：S1051；Package：SOIC；12-BIT SCHOTTKY BARRIER DIODE BUS-TERMINATION ARRAY

Designed to Reduce Reflection Noise Repetitive Peak Forward Current to 200 mA 12-Bit Array Structure Suited for Bus-Oriented Systems description/ordering information This Schottky barrier diode bus-termination array is designed to reduce reflection noise on memory bus lines. This device c

文件：731.1 Kbytes 頁數(shù)：21 Pages

TI

德州儀器