isc Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage -V(BR)CEO= -60V(Min) ·Collector-Emitter Saturation Voltage -VCE(sat)= -1.1 V(Max) @IC=-4A APPLICATIONS ·Designed for power amplifier,high speed switching and regulated power supply applications.

文件：252.15 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無錫固電

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

文件：1.60012 Mbytes 頁(yè)數(shù)：12 Pages

TECCOR

Electrical Specifications

文件：1.2956 Mbytes 頁(yè)數(shù)：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 10.0 Ampere)

VOLTAGE 20 to 60 Volts CURRENT 10 Amperes FEATURES ? Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. ? Exceeds environmental standards of MIL-S-19500/228 ? Low power loss, high efficiency. ? Low forwrd voltage, hig

文件：38.24 Kbytes 頁(yè)數(shù)：2 Pages

PANJIT

強(qiáng)茂