Switching (??0V, ??.0A)

文件：93.98 Kbytes 頁數(shù)：5 Pages

ROHM

羅姆

P -CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF050P03N combines advanced trench MOSFETtechnology with a low resistance package to provide extremely low RDS(ON). ● Features Advance high cell density Trench technology Low RDS(ON) to minimize conductive loss Low Gate Charge for fast switching Low Thermal resist

文件：2.93139 Mbytes 頁數(shù)：5 Pages

TUOFENG

拓鋒半導(dǎo)體

P-Channel Enhancement Mode Power MOSFET

Description The G050P03K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：579.64 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

P-Channel Enhancement Mode Power MOSFET

Description The G050P03S uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：1.00091 Mbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體

P-Channel Enhancement Mode Power MOSFET

Description The G050P03T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：867.14 Kbytes 頁數(shù)：6 Pages

GOFORD

谷峰半導(dǎo)體