RF Power Field Effect Transistor

865--960 MHz, 28 W AVG., 28 V SINGLE W--CDMA LATERAL N--CHANNEL RF POWER MOSFET Designed for CDMA base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. ? Typical Single--Carrier W--CDMA Perfor

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FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET This 50 watt RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to 1880 MHz. ? Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1800 mA, Pout = 50 Watts Avg., Input Sign

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恩XP

RF Power Field Effect Transistor

恩XP

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz. ? Typical Doherty Single--Carrier

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恩XP

GaN Doherty Hybrid Amplifier

Description Accommodating the future of 4G/LTE small cells, RFHIC introduces RTH23007-10 amplifier fabricated using an advanced high power density Gallium Nitride (GaN) semiconductor process. This high performance amplifier achieves high efficiency of 45, and powers 7W over the frequency range

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RFHIC

GaN Doherty Hybrid Amplifier

文件：586.38 Kbytes 頁(yè)數(shù)：6 Pages

RFHIC

GaN Doherty Hybrid Amplifier

文件：586.39 Kbytes 頁(yè)數(shù)：6 Pages

RFHIC

GaN Doherty Hybrid Amplifier

文件：581.27 Kbytes 頁(yè)數(shù)：6 Pages

RFHIC

GaN Hybrid Power Amplifier

文件：1.28273 Mbytes 頁(yè)數(shù)：8 Pages

HONGFA

宏發(fā)電聲

RF Power LDMOS Transistors

文件：985.86 Kbytes 頁(yè)數(shù)：21 Pages

FREESCALEFreescale Semiconductor, Inc

飛思卡爾飛思卡爾半導(dǎo)體