Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications ● Including two devices in US6 (ultra super mini type with 6 leads) ● With built-in bias resistors ● Simplify circuit design ● Reduce a quantity of parts and manufacturing process

文件：263.79 Kbytes 頁數(shù)：6 Pages

TOSHIBA

東芝

Bias resistor built-in transistor (BRT), 2-in-1

Application Scope：General-purpose\nPolarity：NPN + PNP\nInternal Connection：2-in-1 (Point-symmetrical)\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available Collector Current (Q1) IC 0.1 A \nCollector Current (Q2) IC -0.1 A \nCollector-emitter voltage (Q1) VCEO 50 V \nCollector-emitter voltage (Q2) VCEO -50 V ;

Toshiba

東芝

Bias resistor built-in transistor (BRT), 2-in-1

Application Scope：General-purpose\nPolarity：NPN + PNP\nInternal Connection：2-in-1 (Point-symmetrical)\nRoHS Compatible Product(s) (#)：Available Collector Current (Q1) IC 0.08 A \nCollector Current (Q2) IC -0.08 A \nCollector-emitter voltage (Q1) VCEO 50 V \nCollector-emitter voltage (Q2) VCEO -50 V ;

Toshiba

東芝

Bias resistor built-in transistor (BRT), 2-in-1

Application Scope：General-purpose\nPolarity：NPN + PNP\nInternal Connection：2-in-1 (Point-symmetrical)\nRoHS Compatible Product(s) (#)：Available Collector Current (Q1) IC 0.05 A \nCollector Current (Q2) IC -0.05 A \nCollector-emitter voltage (Q1) VCEO 20 V \nCollector-emitter voltage (Q2) VCEO -20 V ;

Toshiba

東芝