Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications ? Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. ? Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more

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TOSHIBA

東芝

Bias resistor built-in transistor (BRT), 2-in-1

Application Scope：General-purpose\nPolarity：PNP×2\nInternal Connection：2-in-1 (Parallel)\nComplementary Product：RN1961FE\nRoHS Compatible Product(s) (#)：Available Collector Current (Q1) IC -0.1 A \nCollector Current (Q2) IC -0.1 A \nCollector-emitter voltage (Q1) VCEO -50 V \nCollector-emitter voltage (Q2) VCEO -50 V ;

Toshiba

東芝

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

文件：178.1 Kbytes 頁數(shù)：8 Pages

TOSHIBA

東芝

1 Watt DC-4 GHz Packaged HFET

文件：656.06 Kbytes 頁數(shù)：20 Pages

TRIQUINT

Crystal Unit SMD 2.0x1.6 20.0MHz

Features: Surface Mount Hermetic Package Excellent Reliability Performance Good Frequency Perturbation and Stability over temperature Ultra Miniature Package Description and Applications: Surface mount 2.0mmx1.6mm crystal unit for use in wireless communications devices, especially for a n

文件：156.17 Kbytes 頁數(shù)：8 Pages

TAI-SAW

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