Bias resistor built-in transistor (BRT)

Application Scope：General-purpose\nPolarity：PNP\nInternal Connection：Single\nComplementary Product：RN1118MFV\nAEC-Q101：Conform(*)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC -0.1 A \nCollector-emitter voltage VCEO -50 V ;

Toshiba

東芝

Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications

文件：207.16 Kbytes 頁數：8 Pages

TOSHIBA

東芝

Package：SOT-723；包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 類別：分立半導體產品 晶體管 - 雙極（BJT）- 單，預偏置 描述：TRANS PREBIAS PNP 50V 0.1A VESM

Toshiba Semiconductor and Storage

318.0 MHz SAW Resonator

文件：169.68 Kbytes 頁數：2 Pages

RFM

850 MHz 1 Watt Power Amplifier with Active Bias

文件：214.07 Kbytes 頁數：6 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

850 MHz 1 Watt Power Amplifier with Active Bias

Product Description Sirenza Microdevices’ SPA-2118 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and

文件：215.1 Kbytes 頁數：6 Pages

SIRENZA