Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

For use in Muting and Switching Applications ? Emitter-base voltage is high: VEBO = 25 V (max) ? Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost.

文件：122.07 Kbytes 頁數(shù)：3 Pages

TOSHIBA

東芝

For use in Muting and Switching Applications

文件：269.92 Kbytes 頁數(shù)：4 Pages

TOSHIBA

東芝

Bias resistor built-in transistor (BRT), 2-in-1

Application Scope：Muting\nPolarity：NPN×2\nInternal Connection：2-in-1 (Common emitter)\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current (Q1) IC 0.3 A \nCollector Current (Q2) IC 0.3 A \nCollector-emitter voltage (Q1) VCEO 20 V \nCollector-emitter voltage (Q2) VCEO 20 V ;

Toshiba

東芝

For use in Muting and Switching Applications

文件：269.92 Kbytes 頁數(shù)：4 Pages

TOSHIBA

東芝