絲?。?strong>RML；Package：SOD-123FA；Surface Mount Fast Recovery Rectifiers 0.8 A, 50 V - 1000 V

Features ? Glass Passivated Chip Junction ? Fast Switching for High Efficiency ? High Surge Capacity ? Low Forward Voltage: 1.3 V Maximum ? UL Flammability 94V?0 Classification ? MSL 1 per J?STD?020 ? RoHS Compliant / Green Molding Compound ? Industrial Device Qualified per AEC?Q101 Standa

文件：237.22 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導(dǎo)體

絲印：RML；Package：SOD-123FA；Surface Mount Fast Recovery Rectifiers 0.8 A, 50 V - 1000 V

Features ? Glass Passivated Chip Junction ? Fast Switching for High Efficiency ? High Surge Capacity ? Low Forward Voltage: 1.3 V Maximum ? UL Flammability 94V?0 Classification ? MSL 1 per J?STD?020 ? RoHS Compliant / Green Molding Compound ? Industrial Device Qualified per AEC?Q101 Standa

文件：237.22 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導(dǎo)體

Wideband Low Noise MMIC Amplifier

[Raytheon] Description The Raytheon RMLA3565-58 is a single bias wideband low noise MMIC amplifier that meets the following specifications over the 3.5 - 6.5 GHz frequency range. The MMIC requires no external matching circuits no external gate bias supply. This device uses Raytheon’s advanced 0.

文件：349.08 Kbytes 頁數(shù)：8 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

Wideband Low Noise MMIC Amplifier

General Description The Fairchild Semiconductor’s RMLA3565C is a single bias wideband low noise MMIC amplifier designed for the 3.5–6.5 GHz frequency range. The MMIC requires no external matching circuits or external gate bias supply. This device uses our advanced 0.25μm PHEMT process to provide

文件：257.79 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

Wideband Low Noise MMIC Amplifier

General Description The Fairchild Semiconductor’s RMLA3565C is a single bias wideband low noise MMIC amplifier designed for the 3.5–6.5 GHz frequency range. The MMIC requires no external matching circuits or external gate bias supply. This device uses our advanced 0.25μm PHEMT process to provide

文件：257.79 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導(dǎo)體

4Mb Advanced LPSRAM

Description The RMLV0408E Series is a family of 4-Mbit static RAMs organized 524,288-word × 8-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0408E Series has realized higher density, higher performance and low power consumption. The RMLV0408E Series offers l

文件：294.52 Kbytes 頁數(shù)：12 Pages

RENESAS

瑞薩

4Mb Advanced LPSRAM

Description The RMLV0408E Series is a family of 4-Mbit static RAMs organized 524,288-word × 8-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0408E Series has realized higher density, higher performance and low power consumption. The RMLV0408E Series offers l

文件：294.52 Kbytes 頁數(shù)：12 Pages

RENESAS

瑞薩

4Mb Advanced LPSRAM

Description The RMLV0408E Series is a family of 4-Mbit static RAMs organized 524,288-word × 8-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0408E Series has realized higher density, higher performance and low power consumption. The RMLV0408E Series offers l

文件：294.52 Kbytes 頁數(shù)：12 Pages

RENESAS

瑞薩

4Mb Advanced LPSRAM

Description The RMLV0408E Series is a family of 4-Mbit static RAMs organized 524,288-word × 8-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0408E Series has realized higher density, higher performance and low power consumption. The RMLV0408E Series offers l

文件：294.52 Kbytes 頁數(shù)：12 Pages

RENESAS

瑞薩

4Mb Advanced LPSRAM

Description The RMLV0408E Series is a family of 4-Mbit static RAMs organized 524,288-word × 8-bit, fabricated by Renesas’s high-performance Advanced LPSRAM technologies. The RMLV0408E Series has realized higher density, higher performance and low power consumption. The RMLV0408E Series offers l

文件：294.52 Kbytes 頁數(shù)：12 Pages

RENESAS

瑞薩