功率器件

Reactor

亞成微

IGBT

General description High speed IGBT with anti-parallel diode in TO247 package. Features and benefits ? High speed with low switching losses ? Fast and soft recovery anti-parallel diode ? Positive VCE(sat) temperature coefficient ? Trench gate field-stop technology ? Halogen Free package a

文件：843.98 Kbytes 頁數(shù)：15 Pages

WEEN

瑞能半導(dǎo)體

IGBT

General description High speed IGBT with anti-parallel diode in TO247 package. Features and benefits ? High speed with low switching losses ? Fast and soft recovery anti-parallel diode ? Positive VCE(sat) temperature coefficient ? Trench gate field-stop technology ? Halogen Free package a

文件：843.98 Kbytes 頁數(shù)：15 Pages

WEEN

瑞能半導(dǎo)體

BIDW50N65T Insulated Gate Bipolar Transistor (IGBT)

General Information The Bourns? Model BIDW50N65T IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteris

文件：1.32999 Mbytes 頁數(shù)：10 Pages

BOURNS

伯恩斯

IGBT

DESCRIPTION · Low Saturation Voltage:VCE(sat)=2.2V@IC=50A · High Current Capability · High Input Impedance APPLICATIONS · Solar Converters · Uninterrupted Power Supply · UPS,PFC · Welding Converters

文件：374.45 Kbytes 頁數(shù)：4 Pages

ISC

無錫固電

650V/50A Trench Field Stop IGBT

Features ? 650V 50A,VCE(sat)(typ.) = 1.70 V@50A ? Field Stop IGBT Technology. ? 10μs Short Circuit Capability. ? Square RBSOA. ? Positive VCE (on) Temperature Coefficient. Benefits ? High Efficiency for Motor Control. ? Rugged Performance. ? Excellent Current Sharing in Parallel Operation

文件：530.17 Kbytes 頁數(shù)：2 Pages

LUGUANG

魯光電子