絲印：K72；Package：SOT523；N-Channel Enhancement Mode Power MOSFET

General Features VDS =50V,ID =0.35A RDS(ON) 2KV

文件：587.28 Kbytes 頁數(shù)：6 Pages

RECTRON

麗正國際

絲?。?a target="_blank" title="Marking" href="/72/marking.html">72；Package：DFN1006；N-Channel Trench MOSFET

General Features VDS = 60V,ID = 0.35A RDS(ON)

文件：414.37 Kbytes 頁數(shù)：6 Pages

RECTRON

麗正國際

Process transmitter with control unit

Your benefits ? 5-digit, 7-segment backlit LC display ? User-configurable dot matrix display range for bar graph, units and tag name ? 1 or 2 universal inputs ? 2 relays (optional) ? Min./max. value saved ? 1 or 2 calculated values ? One linearization table with 32 points for each calculate

文件：1.0146 Mbytes 頁數(shù)：16 Pages

EH

恩德斯

絲?。?a target="_blank" title="Marking" href="/ammopak/marking.html">AMMOPAK；Package：TO-92；N-Channel MOSFET 600V, 0.4 A, 8.5Q

Features Vds = 600V id=04A @Vgs=10V Rds(on)

文件：310.41 Kbytes 頁數(shù)：6 Pages

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絲印：1606；Package：DFN1006-3；N-Channel Trench MOSFET

General Features VDS = 20V,ID = 0.7A RDS(ON)

文件：405.06 Kbytes 頁數(shù)：6 Pages

RECTRON

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絲印：1605；Package：DFN1006-3；P-Channel Trench MOSFET

General Features VDS = -20V,ID = -0.7A RDS(ON)

文件：408.77 Kbytes 頁數(shù)：6 Pages

RECTRON

麗正國際

絲?。?a target="_blank" title="Marking" href="/0101/marking.html">0101；Package：SOT523；N-Channel Enhancement Mode Power MOSFET

General Features VDS =20V,ID =0.87A RDS(ON)

文件：677.99 Kbytes 頁數(shù)：7 Pages

RECTRON

麗正國際

00 - NIM-CAMAC

文件：66.18 Kbytes 頁數(shù)：3 Pages

LEMO

雷莫

E - Outdoor Stepped Insert

文件：62.04 Kbytes 頁數(shù)：3 Pages

LEMO

雷莫

E - Outdoor Stepped Insert

文件：62.03 Kbytes 頁數(shù)：3 Pages

LEMO

雷莫