| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
RM7N60 | Silicon N-Channel MOSFET Features 7A,600V,RDS(on)(Max 1.2Ω)@VGS=10V Ultra-low Gate Charge(Typical 29nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(VISO=4000V AC) Maximum Junction Temperature Range(150℃) 文件：1.12707 Mbytes 頁(yè)數(shù)：8 Pages | RECTRON 麗正國(guó)際 | RECTRON | |
絲?。?a target="_blank" title="Marking" href="/7n600/marking.html">7N600；Package：TO251；N-Channel Super Junction Power MOSFET III Features New technology for high voltage device Low on-resistance and low conduction losses Small package Uitra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant Halogen-free 文件：988.92 Kbytes 頁(yè)數(shù)：8 Pages | RECTRON 麗正國(guó)際 | RECTRON | ||
絲?。?a target="_blank" title="Marking" href="/7n600/marking.html">7N600；Package：TO252；N-Channel Super Junction Power MOSFET III Features New technology for high voltage device Low on-resistance and low conduction losses Small package Uitra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant Halogen-free 文件：988.92 Kbytes 頁(yè)數(shù)：8 Pages | RECTRON 麗正國(guó)際 | RECTRON | ||
MOSFET | Rectron 麗正國(guó)際 | Rectron | ||
MOSFET | Rectron 麗正國(guó)際 | Rectron |
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