R. F. Molded Chokes

[Ohmite Mfg. Co.]

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R. F. Molded Chokes

[Ohmite Mfg. Co.]

文件：34.04 Kbytes 頁(yè)數(shù)：1 Pages

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絲印：33N100；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

General Features VDS = 100V,ID =33A Special process technology for high ESD capability High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation RDS(ON)

文件：172.8 Kbytes 頁(yè)數(shù)：8 Pages

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絲?。?a target="_blank" title="Marking" href="/3400a/marking.html">3400A；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

General Features VDS = 30V,ID = 5.8A RDS(ON)

文件：876.19 Kbytes 頁(yè)數(shù)：7 Pages

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絲印：R0；Package：SOT-23；N-Channel Enhancement Mode Mosfet

Features High dense cell design for extremely low RDS(on). Exceptional on-resistance and maximum DC current capability. Load/Power Switching. Interfacing Switching

文件：400.34 Kbytes 頁(yè)數(shù)：5 Pages

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絲?。?a target="_blank" title="Marking" href="/a19t/marking.html">A19T；Package：SOT-23；P-Channel Enhancement Mode Power MOSFET

Description The RM3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features VDS = -30V,ID = -4.2A RDS(ON)

文件：165.34 Kbytes 頁(yè)數(shù)：8 Pages

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絲印：R1；Package：SOT-23；P-Channel Enhancement Mode Mosfet

Features High dense cell design for extremely low RDS(on). Exceptional on-resistance and maximum DC current capability. Load/Power Switching. Interfacing Switching

文件：371 Kbytes 頁(yè)數(shù)：5 Pages

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絲印：3402；Package：SOT-23；N-Channel MOSFET

FEATURES Lead free product is acquired Surface mount package

文件：108.07 Kbytes 頁(yè)數(shù)：4 Pages

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絲?。?a target="_blank" title="Marking" href="/3404/marking.html">3404；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

Genera Features VDS = 30V,ID = 5.8A RDS(ON)

文件：1.09174 Mbytes 頁(yè)數(shù)：7 Pages

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絲?。?a target="_blank" title="Marking" href="/3404/marking.html">3404；Package：SOT-23-3L；N-Channel Enhancement Mode Power MOSFET

G eneral Features Vds(V) = 30V Io = 6.5 A (Vgs = 10V) Rds(on)

文件：351.9 Kbytes 頁(yè)數(shù)：5 Pages

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