絲?。?a target="_blank" title="Marking" href="/2302/marking.html">2302；Package：SOT-23；N-Channel Enhancement Mode Power MOSFET

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麗正國際

20V N-Channel MOSFET

RM TECHNOLOGY

瑞美科

絲?。?a target="_blank" title="Marking" href="/s2/marking.html">S2；Package：SOT-23；N-Channel Enhancement Mode Mosfet

Features TrenchFET Power MOSFET Load Switch for Portable Devices. DC/DC Converter.

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麗正國際

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications ● With built-in bias resistors ● Simplify circuit design ● Reduce a quantity of parts and manufacturing process ● Complementary to RN1301~1306

文件：261.5 Kbytes 頁數(shù)：7 Pages

TOSHIBA

東芝

20V N-Channel Enhancement Mode MOSFET

Features ◇ Advanced trench process technology ◇ High density cell design for ultra low on-resistance ◇ Excellent thermal and electrical capabilities ◇ Compact and low profile SOT-23 package

文件：187.22 Kbytes 頁數(shù)：4 Pages

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矽萊克半導體

20V N-Channel Enhancement Mode MOSFET

Features ◇ Advanced trench process technology ◇ High density cell design for ultra low on-resistance ◇ Excellent thermal and electrical capabilities ◇ Compact and low profile SOT-23 package

文件：187.22 Kbytes 頁數(shù)：4 Pages

SIRECT

矽萊克半導體