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          首頁(yè) >RM15>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          RM150M

          R. F. Molded Chokes

          [Ohmite Mfg. Co.]

          文件:34.04 Kbytes 頁(yè)數(shù):1 Pages

          ETCList of Unclassifed Manufacturers

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          RM150N100ADF

          絲?。?a target="_blank" title="Marking" href="/fn100a/marking.html">FN100A;Package:DFN5X6-8L;N-Channel Super Trench Power MOSFET

          General Features VDS =100V,ID =150A RDS(ON)

          文件:422.21 Kbytes 頁(yè)數(shù):7 Pages

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          RM150N100AHD

          絲印:150N100;Package:TO-263-2L;N-Channel Super Trench Power MOSFET

          Description The RM150N100AHD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

          文件:498.23 Kbytes 頁(yè)數(shù):7 Pages

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          RM150N100AT2

          絲?。?a target="_blank" title="Marking" href="/150n100/marking.html">150N100;Package:TO-220-3L;N-Channel Super Trench Power MOSFET

          Description uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

          文件:380.57 Kbytes 頁(yè)數(shù):8 Pages

          RECTRON

          麗正國(guó)際

          RM150N100HD

          絲印:150N100;Package:TO-263-2L;N-Channel Super Trench Power MOSFET

          Description The RM150N100HD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hig

          文件:276.21 Kbytes 頁(yè)數(shù):9 Pages

          RECTRON

          麗正國(guó)際

          RM150N100T2

          絲?。?a target="_blank" title="Marking" href="/150n100/marking.html">150N100;Package:TO-220-3L;N-Channel Super Trench Power MOSFET

          Description The RM150N100T2 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hig

          文件:242.2 Kbytes 頁(yè)數(shù):9 Pages

          RECTRON

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          RM150N150HD

          絲?。?a target="_blank" title="Marking" href="/150n150/marking.html">150N150;Package:TO-263-2L;N-Channel Super Trench Power MOSFET

          General Features VDS =150V,ID =150A RDS(ON)

          文件:362.85 Kbytes 頁(yè)數(shù):9 Pages

          RECTRON

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          RM150N30ALD

          絲?。?a target="_blank" title="Marking" href="/150n30/marking.html">150N30;Package:TO-252-2L;N-Channel Enhancement Mode Power MOSFET

          Description The RM150N30ALD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =150A RDS(ON)

          文件:650.33 Kbytes 頁(yè)數(shù):8 Pages

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          RM150N30LT2

          絲?。?a target="_blank" title="Marking" href="/150n30/marking.html">150N30;Package:TO-220-3L;N-Channel Enhancement Mode Power MOSFET

          Description The RM150N30LT2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =150A RDS(ON)

          文件:304.77 Kbytes 頁(yè)數(shù):8 Pages

          RECTRON

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          RM150N40DFV

          絲印:FN40;Package:DFN5X6-8L;N-Channel Super Trench Power MOSFET

          Description The RM150N40DFV uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

          文件:2.29201 Mbytes 頁(yè)數(shù):7 Pages

          RECTRON

          麗正國(guó)際

          技術(shù)參數(shù)

          • Repetitive peak reverse voltage Max:

            3300V

          • DC forward current Max:

            1500A

          • Configuration:

            Dual

          • Isolation voltage:

            6000Vrms

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          更多RM15供應(yīng)商 更新時(shí)間2026-1-19 15:36:00
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