0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs

These are intelligent monolithic power circuits which incorporate a lateral bipolar transistor, resistors, zener diodes and a power MOS transistor. The current limiting of these devices allow it to be used safely in circuits where a shorted load condition may be encountered. The drain to source

文件：93.44 Kbytes 頁數(shù)：9 Pages

INTERSIL

0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs

文件：188.51 Kbytes 頁數(shù)：13 Pages

FAIRCHILD

仙童半導體

0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETs

These are intelligent monolithic power circuits which incorporate a lateral bipolar transistor, resistors, zener diodes and a power MOS transistor. The current limiting of these devices allow it to be used safely in circuits where a shorted load condition may be encountered. The drain to source

文件：93.44 Kbytes 頁數(shù)：9 Pages

INTERSIL

0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs

文件：188.51 Kbytes 頁數(shù)：13 Pages

FAIRCHILD

仙童半導體

N-Channel Enhancement Mode Field Effect Transistor

文件：588.99 Kbytes 頁數(shù)：6 Pages

YANGJIE

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