| 型號(hào) | 下載 訂購(gòu) | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
RFP2N08 | 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs Description These are N-channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters. motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive 文件:46.73 Kbytes 頁(yè)數(shù):4 Pages | INTERSIL | INTERSIL | |
RFP2N08 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 2A@ TC=25℃ ·Drain Source Voltage -VDSS= 80V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.05Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control 文件:371.35 Kbytes 頁(yè)數(shù):2 Pages | ISC 無(wú)錫固電 | ISC | |
RFP2N08 | 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs 文件:93.26 Kbytes 頁(yè)數(shù):2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | |
RFP2N08 | 2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs Description\nThese are N-channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters. motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive p ? 2A, 80V and 100V\n? rDS(ON) 1.05?\n? SOA is Power Dissipation Limited\n? Nanosecond Switching Speeds\n? Linear Transfer Characteristics\n? High Input Impedance\n? Majority Carrier Device\n? Related Literature\n- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”; | Renesas 瑞薩 | Renesas | |
RFP2N08 | 2A 80V AND 100V 1.05 OHM N-CHANNEL POWER MOSFETS | NJS | NJS | |
2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETs The RFP2N08L and RFP2N10L are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. This performance is accomplished th 文件:35.55 Kbytes 頁(yè)數(shù):5 Pages | INTERSIL | INTERSIL | ||
N-Channel Logic Level Power Field-Effect Transistors (L2 FET) 文件:92.71 Kbytes 頁(yè)數(shù):2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體公司 | NJSEMI | ||
Trans MOSFET N-CH 80V 2A 3-Pin(3+Tab) TO-220AB | NJS | NJS |
技術(shù)參數(shù)
- Minimum Operating Temperature:
-55°C
- Maximum Power Dissipation:
25000mW
- Maximum Operating Temperature:
150°C
- Maximum Gate Source Voltage:
±10V
- Maximum Drain Source Voltage:
80V
- Maximum Continuous Drain Current:
2A
- Material:
Si
- Configuration:
Single
- Channel Type:
N
- Channel Mode:
Enhancement
- Category:
Power MOSFET
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
HAR |
24+ |
N/A |
3560 |
詢價(jià) | |||
INTERSIL |
17+ |
TO-220 |
6200 |
詢價(jià) | |||
HARRIS |
16+ |
TO-220 |
10000 |
全新原裝現(xiàn)貨 |
詢價(jià) | ||
F |
24+ |
TO-220AB |
5000 |
全現(xiàn)原裝公司現(xiàn)貨 |
詢價(jià) | ||
INTESIL |
23+ |
TO-220 |
8000 |
專做原裝正品,假一罰百! |
詢價(jià) | ||
NEXPERIA/安世 |
23+ |
SOT-323 |
69820 |
終端可以免費(fèi)供樣,支持BOM配單! |
詢價(jià) | ||
INTESIL |
2447 |
TO-220 |
100500 |
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨 |
詢價(jià) | ||
INTERSIL |
2022+ |
to-220 |
12888 |
原廠代理 終端免費(fèi)提供樣品 |
詢價(jià) | ||
HAR |
23+ |
NA |
20000 |
全新原裝假一賠十 |
詢價(jià) | ||
INTERSIL |
23+ |
TO-220 |
89630 |
當(dāng)天發(fā)貨全新原裝現(xiàn)貨 |
詢價(jià) |
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