P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS

P-Channel Enhancement - Mode Power Field-Effect Transistors Features: ■ SOA is power-dissipation limited ■ Nanoseconde switching speeds ■ Linear transfer characteristics ■ High input impedance ■ Majority carrier device

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GESS

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -10A@ TC=25℃ ·Drain Source Voltage -VDSS= -120V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.25Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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ISC

無(wú)錫固電

P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS

GESS

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

FEATURES ? Very low profile - typical height of 1.1 mm ? Ideal for automated placement ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified

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VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface Mount Trench MOS Barrier Schottky Rectifier

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VISHAYVishay Siliconix

威世威世科技公司

High Current Density Surface-Mount TMBS? (Trench MOS Barrier Schottky) Rectifier

FEATURES ? Very low profile - typical height of 1.1 mm ? Ideal for automated placement ? Trench MOS Schottky technology ? Low forward voltage drop, low power losses ? High efficiency operation ? Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C ? AEC-Q101 qualified available? -

文件：103.64 Kbytes 頁(yè)數(shù)：5 Pages

VISHAYVishay Siliconix

威世威世科技公司