絲?。?strong>RFP；Package：SMAJ；1500W Transient Voltage Suppression Diodes

文件：1.12743 Mbytes 頁(yè)數(shù)：11 Pages

FUTUREWAFER

絲印：F12N10L；Package：TO-220AB；12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET

These are N-Channel enhancement mode silicon gate power field effect transistors specifically designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching and solenoid drivers. This performance is accomplished through a special gate

文件：361.5 Kbytes 頁(yè)數(shù)：6 Pages

FAIRCHILD

仙童半導(dǎo)體

ROOF FILTER FAN

> Very low noise > Minimal depth in enclosure > High through-flow air volume > High reliability > Time-saving installation and mat exchange

文件：253.87 Kbytes 頁(yè)數(shù)：1 Pages

STEGO

N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS

N-Channel Enhancement-Mode Power Field-Effect Transistors Features ■ SOA is power-dissipation limited ■ Nanosecond switching speeds ■ Linear transfer characteristics ■ High input impedance ■ Majority carrier device

文件：211.91 Kbytes 頁(yè)數(shù)：4 Pages

GESS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 120V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.79 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.8 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS

N-Channel Enhancement-Mode Power Field-Effect Transistors Features ■ SOA is power-dissipation limited ■ Nanosecond switching speeds ■ Linear transfer characteristics ■ High input impedance ■ Majority carrier device

文件：211.91 Kbytes 頁(yè)數(shù)：4 Pages

GESS

10A, 150V, 0.300 Ohm, N-Channel Power MOSFETs

Features ● 10 A, 120V and 150V ● rDS(on) = 0.3Ω ● SOA is Power-Dissipation Limited ● Nanosecond Switching Speeds ● Linear Transfer Characteristics ● High Input Impedance ● Majority Carrier Device

文件：40.37 Kbytes 頁(yè)數(shù)：5 Pages

INTERSIL

10A, 30V, 0.200 ohm, Logic Level P-Channel Power MOSFET

Description These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as

文件：272.14 Kbytes 頁(yè)數(shù)：12 Pages

HARRIS

10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET

10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET These products are P-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. The

文件：133.99 Kbytes 頁(yè)數(shù)：8 Pages

INTERSIL